Влияние химического состава кристаллов TlIn-=SUB=-1-x-=/SUB=-Er-=SUB=-x-=/SUB=-S-=SUB=-2-=/SUB=- (0≤ x≤0.01) на их диэлектрические характеристики и параметры локализованных состояний

Abstract

The frequency dependences of the real (ε) and imaginary (ε ″) components of the complex dielectric constant, tangent of dielectric loss (tan) and ac conductivity (σac) of the obtained TlIn1-хErхS2 (0  x  0.01) crystals have been studied in the frequency range f = 5104–3.5107 Hz. It is established that in TlIn1-хErхS2 a relaxation dispersion of ε and ε″ takes place. The effect of erbium concentration (Er) in TlIn1-хErхS2 crystals on their dielectric coefficients was studied. In the high frequency range, the ac conductivity of TlIn1-хErхS2 crystals obeyed the σac ~ f 0.8 law, which is characteristic of a hopping charge transfer mechanism at states localized near the Fermi level. The parameters of states localized in the band gap and the influence of the chemical composition of the TlIn1-хErхS2 crystals on these parameters are estimated.