Влияние Легирования На Свойства Аморфного Гидрогенизированного Кремния, Облученного Фемтосекундными Лазерными Импульсами

Abstract

A comparative analysis of the effect of femtosecond laser irradiation on the structure and conductivity of undoped and boron-doped hydrogenated amorphous silicon ( a -Si: H) is performed. It is demonstrated that the process of nanocrystal formation in the amorphous matrix under femtosecond laser irradiation is initiated at lower laser energy densities in undoped a -Si: H samples. The differences in conductivity between undoped and doped a -Si: H samples vanish almost completely after irradiation with an energy density of 150–160 mJ/cm^2.