Влияние лантана на транспортные свойства оксиселенидов Bi-=SUB=-1-x-=/SUB=-La-=SUB=-x-=/SUB=-CuSeO

Abstract

In this work we present the results of the transport properties study for p-type Bi1-xLaxCuSeO (x = 0.02; 0.04; 0.06) oxyselenides. Accordingly to temperature dependencies of the electrical resistivity, charge carriers concentration and mobility, it was revealed that the substitution of Bi3+ ions to La3+ ions leads to charge carriers concentration enhancement caused by generation of holes, which is presumably attributed to the bismuth deficiencies formation with respect to the substitution level. The work was carried out with financial support from the Ministry of Education and Science of the Russian Federation in the framework of Increase Competitiveness Program of NUST “MISIS”.