Влияние комбинированного ионного и электронного облучения на полосу люминесценции 2 eV в гексагональном нитриде бора

Abstract

Point defects in wide-bandgap semiconductors, in particular in hexagonal boron nitride, are promising candidates for single-photon emitters, used in quantum informatics. We investigated cathodoluminescence of ion beam induced defects in hexagonal boron nitride, as well as the effect of prolonged electron irradiation on the intensity of the luminescence. It has been shown that the intensity of both band-to-band emission and defect related emission decreased after ion irradiation, and during subsequent electron irradiation the intensity of 2 eV luminescence band increased, whereas the intensity of other bands remained unchanged.