Abstract:The effect of ambient humidity on the electrical conductive properties of α-Ga2O3 and α-Ga2O3/ε-Ga2O3 structures has been studied. Polymorphic Ga2O3 epitaxial layers were deposited by chloride vapor phase epitaxy on sapphire substrates. Pt and Pt/Ti were used as contacts. It was found that the Pt/α-Ga2O3/Pt and Pt/Ti/α-Ga2O3/ε-Ga2O3/Ti/Pt structures exhibit a high sensitivity of the current – voltage characteristics (I–V characteristics) to atmospheric humidity in the temperature ra… Show more
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