Варизонные гетероструктуры Al-=SUB=-x-=/SUB=-In-=SUB=-y-=/SUB=-Ga-=SUB=-1-x-y-=/SUB=-P-=SUB=-z-=/SUB=-As-=SUB=-1-z-=/SUB=-/GaAs для фотоэлектрических преобразователей

Abstract

The AlxInyGa1-x-yPzAs1-z/GaAs graded-gap heterostructures were grown by the temperature gradient zone recrystallization with a liquid zone reciprocating, where energy band gap varied from 1.43 to 2.2 eV. The influence of technological parameters on the varying in the energy band gap of the grown AlxInyGa1-x-yPzAs1-z/GaAs solid solutions is investigated. In the p-AlxInyGa1-x-yPzAs1-z/n-GaAs heterostructure, the maximum energy band gap gradient of 10490 eV/cm is reached, and an increase in the external quantum efficiency is shown in the wavelength range of 500-900 nm.