Abstract:The structure of nonstoichiometric silicon oxide (SiO_ x ) has been studied by the methods of highresolution X-ray photoelectron spectroscopy and fundamental optical-absorption spectroscopy. The conductivity of SiO_ x ( x = 1.4 and 1.6) films has been measured in a wide range of electric fields and temperatures. Experimental data are described in terms of the proposed SiO_ x structure model based on the concept of fluctuating chemical composition leading to nanoscale fluctuations in the electric potential. The… Show more
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