ΏPAN in Aeschylus, &amp;c

Platt, Arthur

doi:10.1017/cbo9781139523844.015

Cited by 1 publication

(1 citation statement)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…For both types of samples, the negligible effect of light on the capacitance can be observed in the high-frequency range of f > 300 kHz. The monotonic decrease of the capacitance with increasing f in this range is similar to the behavior typically found in dielectric capacitors and is often attributed to the electronic polarization of the materials. , At lower frequencies when 1/ f is much larger than the electron response time, the frequency dependence of the conventional capacitance becomes negligible, which means capacitance is a constant for conventional dielectric capacitors. , However, a strong frequency dependence of the capacitance can be observed on the perovskite MAPbI 3 and MAPbI 3 -PCBM capacitors at lower frequencies below 300 kHz. More importantly, this capacitance increase is amplified in the presence of light in MAPbI 3 capacitors (Figure a).…”

Section: Resultssupporting

confidence: 71%

Probing the Origin of Light-Enhanced Ion Diffusion in Halide Perovskites

Marshall

Acharya

Alkhalifah

et al. 2021

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

Organic−inorganic hybrid halide perovskites have emerged recently as highly promising materials for optoelectronics such as photovoltaics and photodetectors. A unique feature of these materials is ion diffusion that directly impacts the optoelectronic process by affecting the charge transport and trapping. In order to shed light on the ionic diffusion behavior, the hybrid perovskites MAPbI 3 and MAPbI 3 with minor doping of phenyl-C61-butyric acid methyl-ester (MAPbI 3 -PCBM) thin-film capacitors were investigated in the presence of steady and dynamic visible illumination of different intensities. Light-induced capacitance, which increases monotonically with the increase of light intensity, was observed in the low-frequency range below 300 kHz of the electric field on both while differing quantitatively. Specifically, the large light-induced capacitance in the MAPbI 3 capacitors can be obtained in the MAPbI 3 -PCBM ones in the dark. In addition, the increase of capacitance with light intensity is much less in the latter with electron trapping induced by PCBM. This result has revealed that the light-induced capacitance in MAPbI 3 capacitors can be ascribed to the contribution of the additional charges across the capacitors associated with ionic diffusion activated by the illumination and that the effects on the capacitance will remain after the illumination is turned off due to residual photoexcited electrons trapped in the MAPbI 3 -PCBM sample.

show abstract