Φ memristor: Real memristor found

Abstract

Wang et al. claim [J. Appl. Phys. 125, 054504 (2019)] that a current-carrying wire interacting with a magnetic core represents a memristor. Here, we demonstrate that this claim is false.We first show that such memristor "discovery" is based on incorrect physics, which does not even capture basic properties of magnetic core materials, such as their magnetic hysteresis. Moreover, the predictions of Wang et al.'s model contradict the experimental curves presented in their paper. Additionally, the theoretical pinched hysteresis loops presented by Wang et al. can not be reproduced if their model is used, and there are serious flaws in their "negative memristor" emulator design. Finally, a simple gedanken experiment shows that the proposed Φ-memristor would fail the memristor test we recently suggested in J. Phys. D: Appl. Phys. 52, 01LT01 (2019). The device "discovered" by Wang et al. is just an inductor with memory.

Turing patterns in the simplest MCNN

“…From Eqs. (17) and (19) it follows that patterns with different spatial wavelength may emerge by changing D 11 and D 22 . In particular, by increasing the product D 11 D 22 , the wave number decreases as it shown in Fig.…”

“…In the perspective of real implementations of memristor-based systems generating Turing patterns, the simplicity of the cell here studied seems a particularly important factor. Another potential advantage could derive from the characteristics of the recently introduced Φ− memristor [19], a simple device accounting for a direct flux-charge interaction composed by a conductor carrying a controlled amount of current located in proximity to a magnetic lump and, simultaneously, sensing the possibly induced voltage by the switched flux. In particular, with such devices, the possibility of obtaining diffusion among the fluxes of memristive elements as a direct consequence of having adjacent memristors in concentrated circuits [20] can be explored.…”

Soft eSkin: distributed touch sensing with harmonized energy and computing

“…The experiments on memristor demonstrated fast bipolar, non-volatile (NV) switching, involving movement of charged molecular/ionic/atomic species, as observed in nanoscale devices [89,[91][92][93]. Thus, nanoscale memristor devices demonstrate the potential to transform the NVM market, as the data are stored and processed in the same location and could lead to novel forms of computing [89,[91][92][93]. Since then, several materials were investigated as a switching layer for memristor devices on rigid as well as flexible substrates.…”

“…In 1971, similar MIM structure was used by Chua [91] to conceptualize the 'memristor (acronym for memory resistor)' as a new element with inherent memory and valuable circuit properties. Memristors are attractive as they store the information related to past event through the last resistance (previous) state and offer potential for very-high-density integration at low cost of fabrication [89,91,92]. The experiments on memristor demonstrated fast bipolar, non-volatile (NV) switching, involving movement of charged molecular/ionic/atomic species, as observed in nanoscale devices [89,[91][92][93].…”

“…Memristors are attractive as they store the information related to past event through the last resistance (previous) state and offer potential for very-high-density integration at low cost of fabrication [89,91,92]. The experiments on memristor demonstrated fast bipolar, non-volatile (NV) switching, involving movement of charged molecular/ionic/atomic species, as observed in nanoscale devices [89,[91][92][93]. Thus, nanoscale memristor devices demonstrate the potential to transform the NVM market, as the data are stored and processed in the same location and could lead to novel forms of computing [89,[91][92][93].…”