1986
DOI: 10.1109/jqe.1986.1073089
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λ/4-shifted InGaAsP/InP DFB lasers

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Cited by 127 publications
(24 citation statements)
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“…The principle of the phase shift was demonstrated by Alfemess et al [2] in periodic structures made from semiconductor materials, where a phase shift was introduced by etching a space at the center of the device. This forms the basis of the single-mode phase-shifted semiconductor DFB laser [3]. A similar device may be constructed in optical fibers using Manuscript various techniques.…”
Section: Introductionmentioning
confidence: 99%
“…The principle of the phase shift was demonstrated by Alfemess et al [2] in periodic structures made from semiconductor materials, where a phase shift was introduced by etching a space at the center of the device. This forms the basis of the single-mode phase-shifted semiconductor DFB laser [3]. A similar device may be constructed in optical fibers using Manuscript various techniques.…”
Section: Introductionmentioning
confidence: 99%
“…The principle of the phase shift was demonstrated by Alfemess et al [2] in periodic structures made from semiconductor materials, where a phase shift was introduced by etching a space at the centre of the device. This forms the basis of the single-mode phase-shifted semiconductor DFB laser [3]. A similar device may be constructed in optical fibres using various techniques.…”
Section: Introductionmentioning
confidence: 99%
“…Several methods to realize the asymmetric structure were proposed:1) λ/4-shift position is moved from the center of the DFB active region [2],2)the coupling coefficients in both regions divided by the λ/4-shift are changed separately [3],and 3)the reflectivity of both end facets are made highly asymmetric [4]. But, the cost of fabricating such complex structures is high owning to the requirement of the nanometer precision control.…”
Section: Introductionmentioning
confidence: 99%