γ-Ray irradiation-induced unprecedent optical, frictional and electrostatic performances on CVD-prepared monolayer WSe<sub>2</sub>

Wu, Xiongli; Zheng, Xuejun; Zhang, Guangbiao; Chen, Xinnan; Dong, Hui

doi:10.1039/d1ra02310a

Cited by 4 publications

(2 citation statements)

References 51 publications

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“…Felix et al reported changes in the magnetic phase from diamagnetic to ferromagnetic and enhancement in the p-type doping in monolayer WS 2 after 400 Gy irradiation . Wu et al irradiated a monolayer WSe 2 film with a γ radiation dose ranging from 20 to 100 kGy, which resulted in n-type doping along with an enhanced electron-carrier concentration . Hence, the creation of defects by γ-rays can also be visualized as a positive application for achieving doping.…”

Section: Introductionmentioning

confidence: 99%

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γ-Ray-Induced Surface-Charge Redistribution and Change of the Surface Morphology in Monolayer WS₂

Aggarwal

Bisht

Ghosh

et al. 2023

ACS Appl. Nano Mater.

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This work reports the effect of γ radiation on the surface morphology and surface-charge redistribution in a monolayer WS2 film by comparing the film before and after irradiation (1, 50, 100, 200, and 400 kGy dosage). The surface morphology was monitored through optical microscopy and atomic force microscopy. Raman and photoluminescence spectroscopy were used to study the effect on phonon modes and excitonic properties. The results indicated p-type doping and increased trion-to-exciton transitions. Because of the high energy and lower atomic mass of sulfur atoms, γ irradiation induces sulfur vacancies, which creates dangling bonds at vacant sites. The adsorption of oxygen at these reactive sites results in a charge-transfer mechanism, in which electrons get transferred from the WS2 film to the adsorbed oxygen, which forms oxides and induces p-type doping. An increase in the work function of the film from 4.50 eV for a pristine film to 4.82 eV for an irradiated film (at 200 kGy) was calculated from Kelvin probe force microscopy, which indicates shifting of the Fermi level toward the valence band (VB) maxima. Further, VB spectra deduced from X-ray photoelectron spectroscopy showed a red shift of 0.17 eV after irradiation and confirms p-type doping.

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Section: Introductionmentioning

confidence: 99%

“…16 Wu et al irradiated a monolayer WSe 2 film with a γ radiation dose ranging from 20 to 100 kGy, which resulted in n-type doping along with an enhanced electron-carrier concentration. 17 Hence, the creation of defects by γ-rays can also be visualized as a positive application for achieving doping.…”

Section: Introductionmentioning

confidence: 99%

γ-Ray-Induced Surface-Charge Redistribution and Change of the Surface Morphology in Monolayer WS₂

Aggarwal

Bisht

Ghosh

et al. 2023

ACS Appl. Nano Mater.

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Effect of Gamma Irradiation on the Structure, Morphology, and Memristive Properties of CVD Grown ReS₂ Thin Film

Aggarwal,

Bisht,

Jana

et al. 2024

Adv Materials Technologies

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In this work, effect of gamma irradiation on chemical vapor deposition grown ReS2 thin films vis‐a‐vis change in its structure, morphology, chemical composition, and memristive behaviour is reported to assess its radiation hardness for space applications. High‐resolution transmission electron micrographs and selected area electron diffraction pattern infer polycrystalline to amorphous phase transition and increase in the number of grain boundaries (GBs) after exposure to 25 kGy of gamma radiation. X‐ray photoelectron spectroscopy and low‐temperature photoluminescence measurements reveal the formation of sulfur vacancies (SV) accompanied with partial oxidation of film. Memristors are then fabricated on the as‐grown film using different metal electrodes, which are Ag, Pt, and Ti in lateral geometry, and their resistive switching (RS) mechanism is studied along with the impact of gamma irradiation. RS is attributed to the formation of conducting filaments due to GB‐mediated migration of metal ions, SV, and oxygen ions from the partially oxidized film. Furthermore, irradiation is found to increase current in the high resistance state of the device, which subsequently reduces the memory window. This impact is observed to be consistent across all the devices which validates the effect of irradiation irrespective of the nature of the metal electrode used.

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Effect of gamma-ray irradiation on structural and optical property of WSe2 film

Kolhe,

Dalvi,

Hase

et al. 2023

J Mater Sci: Mater Electron

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γ-Ray irradiation-induced unprecedent optical, frictional and electrostatic performances on CVD-prepared monolayer WSe₂

Abstract: Our work showed a new defect inducing technique to engineer the bandgap and control the optical, frictional and electrostatic properties of atomically thin WSe2.

Cited by 4 publications

References 51 publications

γ-Ray-Induced Surface-Charge Redistribution and Change of the Surface Morphology in Monolayer WS₂

γ-Ray-Induced Surface-Charge Redistribution and Change of the Surface Morphology in Monolayer WS₂

Effect of Gamma Irradiation on the Structure, Morphology, and Memristive Properties of CVD Grown ReS₂ Thin Film

Effect of gamma-ray irradiation on structural and optical property of WSe2 film

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γ-Ray irradiation-induced unprecedent optical, frictional and electrostatic performances on CVD-prepared monolayer WSe2

Abstract: Our work showed a new defect inducing technique to engineer the bandgap and control the optical, frictional and electrostatic properties of atomically thin WSe2.

Cited by 4 publications

References 51 publications

γ-Ray-Induced Surface-Charge Redistribution and Change of the Surface Morphology in Monolayer WS2

γ-Ray-Induced Surface-Charge Redistribution and Change of the Surface Morphology in Monolayer WS2

Effect of Gamma Irradiation on the Structure, Morphology, and Memristive Properties of CVD Grown ReS2 Thin Film

Effect of gamma-ray irradiation on structural and optical property of WSe2 film

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Product

Resources

About

γ-Ray irradiation-induced unprecedent optical, frictional and electrostatic performances on CVD-prepared monolayer WSe₂

γ-Ray-Induced Surface-Charge Redistribution and Change of the Surface Morphology in Monolayer WS₂

γ-Ray-Induced Surface-Charge Redistribution and Change of the Surface Morphology in Monolayer WS₂

Effect of Gamma Irradiation on the Structure, Morphology, and Memristive Properties of CVD Grown ReS₂ Thin Film