β- Ga 2 O 3 epitaxial films deposited on epi-GaN/sapphire (0001) substrates by MOCVD

Cao, Qiong; He, Liqun; Xiao, Hongdi; Feng, Xianjin; Li, Yuanjie; Ma, Jin

doi:10.1016/j.mssp.2018.01.010

Cited by 39 publications

(21 citation statements)

References 34 publications

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“…Only two diffraction peaks separated by 180 were detected, due to the natural monoclinic structure of -Ga 2 O 3 . The asymmetric scanning does not show sixfold symmetry with a 60 interval, which has often been observed in thin films deposited on sapphire (Ghose et al, 2017) or GaN (Cao et al, 2018). This confirms the pure single-crystalline nature of this EFG sample, rather than the six twin crystals seen in heteroepitaxial thin films.…”

Section: Resultssupporting

confidence: 74%

In-plane crystalline anisotropy of bulk β-Ga₂O₃

et al. 2021

J Appl Crystallogr

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The anisotropy of X-ray diffraction scanning of (201) β-Ga2O3 bulk material has been investigated. Symmetric rocking curves (RCs) exhibit distinctly different broadening along different azimuths, with a maximum along [102] and a minimum along a direction rotated by 30° from [010]. Williamson–Hall analysis was applied to study possible factors causing the broadening in these RCs, including instrumental factors, mosaic tilt and coherent scattering. It was found that the RC broadening is determined by both isotropic mosaic tilt and anisotropy in the length over which the crystal structure is not disrupted by limiting factors such as grain boundaries or stacking faults, which we term the `lateral limited size'. In this case, the lateral limited size is governed by {200} stacking faults along the [102] direction and grain boundaries along the [010] direction. The result presents a new anisotropy characteristic of (201) β-Ga2O3.

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Section: Resultssupporting

confidence: 74%

In-plane crystalline anisotropy of bulk β-Ga₂O₃

et al. 2021

J Appl Crystallogr

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“…In the spectral data presented in Figure b, the characteristic peaks of Ga 2p1/2 and Ga 2p3/2 are discernible, positioned at energies of 1144.45 and 1117.57 eV, respectively. The difference in energy between these peaks was roughly 26.9 eV, in agreement with the results reported in previous studies. , It was observed that these values remained constant, and there was no temperature change during growth Figure c is a scan pattern of the Ga 3d peak, which could see the Ga 3d signal in 20.1 eV.…”

Section: Resultssupporting

confidence: 91%

Influence of Oxygen on Ga₂O₃ Deposition at Low Temperature by MOCVD

Li,

Wang

et al. 2023

Crystal Growth & Design

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In this study, thin films of Ga 2 O 3 were fabricated on sapphire substrates utilizing metal−organic chemical vapor deposition technology, with deposition conducted at a temperature of 400 °C. The investigation focused on examining the influence of oxygen on the surface morphology, phase transition, and optical characteristics of Ga 2 O 3 films synthesized at relatively low temperatures. X-ray diffraction tests indicated that all films were polycrystalline and had mixed β and ε phases. With an increase in oxygen flow rate from 1400 to 1800 sccm, β-Ga 2 O 3 became the dominant material. Atomic force microscope analysis showed that the root-mean-square roughness had decreased. Film thicknesses, as measured by scanning electron microscopy, were 285.3, 257.6, 243.2, and 254.2 nm, respectively. The high-resolution transmission electron microscope confirmed a mixed-phase structure at an oxygen rate of 2100 sccm. Moreover, the X-ray photoelectron spectroscopy results show that increasing the oxygen flow rate from 1400 to 1800 sccm is effective in reducing the oxygen vacancies and defects in the films. However, excessive oxygen flow (2100 sccm) leads to the exacerbation of prereaction and the deterioration of the film's crystalline quality.

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“…However, β-Ga2O3 (100) growth was performed on various substrates such as GaN(0001)/sapphire, MgAl6O10(100), Gadolinium gallium garnet (Gd3Ga5O12) (110), KTaO3 (100) and SrTiO3 (100) [116,[187][188][189][190]. The (2 ̅ 01) orientation was also reported on MgO (110) substrate [191].…”

Section: Accepted Manuscriptmentioning

confidence: 99%