β-(Al0.18Ga0.82)2O3/Ga2O3 Double Heterojunction Transistor With Average Field of 5.5 MV/cm

Kalarickal, Nidhin Kurian; Xia, Zhanbo; Huang, Hsien-Lien; Moore, Wyatt; Liu, Yumo; Brenner, Mark; Hwang, Jinwoo; Rajan, Siddharth

doi:10.1109/led.2021.3072052

Cited by 64 publications

(28 citation statements)

References 30 publications

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“…(d) Off-state breakdown characteristics of the Ga 2 O 3 MOSFETs with various L GD values. (e) Benchmarking of the MOSFET fabricated on the composite substrate against homoepitaxial Ga 2 O 3 FETs − and devices fabricated on other bonded substrates − in the literature.…”

Section: Resultsmentioning

confidence: 99%

Ultra-Wide Band Gap Ga₂O₃-on-SiC MOSFETs

Song

Bhattacharyya

Karim

et al. 2023

ACS Appl. Mater. Interfaces

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Ultra-wide band gap semiconductor devices based on β-phase gallium oxide (Ga2O3) offer the potential to achieve higher switching performance and efficiency and lower manufacturing cost than that of today’s wide band gap power electronics. However, the most critical challenge to the commercialization of Ga2O3 electronics is overheating, which impacts the device performance and reliability. We fabricated a Ga2O3/4H–SiC composite wafer using a fusion-bonding method. A low-temperature (≤600 °C) epitaxy and device processing scheme was developed to fabricate MOSFETs on the composite wafer. The low-temperature-grown epitaxial Ga2O3 devices deliver high thermal performance (56% reduction in channel temperature) and a power figure of merit of (∼300 MW/cm2), which is the highest among heterogeneously integrated Ga2O3 devices reported to date. Simulations calibrated based on thermal characterization results of the Ga2O3-on-SiC MOSFET reveal that a Ga2O3/diamond composite wafer with a reduced Ga2O3 thickness (∼1 μm) and a thinner bonding interlayer (<10 nm) can reduce the device thermal impedance to a level lower than that of today’s GaN-on-SiC power switches.

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Section: Resultsmentioning

confidence: 99%

Ultra-Wide Band Gap Ga₂O₃-on-SiC MOSFETs

Song

Bhattacharyya

Karim

et al. 2023

ACS Appl. Mater. Interfaces

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“…In the past decade, gallium oxide Ga 2 O 3 has emerged as a challenger for this task with the successful demonstration of power transistors due to the possibility of growing large high-quality singe crystals. Already Ga 2 O 3 based diodes and transistors with 1–3 kV breakdown voltages have been demonstrated as mentioned in Table . − …”

Section: Introductionmentioning

confidence: 99%

A Comprehensive Review on Recent Developments in Ohmic and Schottky Contacts on Ga₂O₃ for Device Applications

Sheoran

Kumar

Singh

2022

ACS Appl. Electron. Mater.

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Ultrawide bandgap β-gallium oxide (β-Ga2O3) is emerging as a viable candidate for next-generation high-power electronics, including Schottky barrier diodes (SBDs) and field-effect transistors (FETs). This is due to its excellent material properties such as ultrawide bandgap of 4.6–4.9 eV, high breakdown electric field of 8 MV/cm, very high Baliga’s figure of merit (BFOM) and mature technology for large bulk single crystals, and epitaxial techniques with controllable n-type doping. Ohmic and rectifying metal–semiconductor contacts on β-Ga2O3 have been developed over the past decade. This work comprehensively reviews the recent development of metal–semiconductor contacts on β-Ga2O3. We start with basic concepts of metal–semiconductor contacts, which is followed by summarizing the current literature on ohmic and Schottky contacts on β-Ga2O3. Finally, the status of high-power Schottky diode contact on β-Ga2O3 is presented.

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“…Among other studies on β-(Al x Ga 1-x ) 2 O 3 /β-Ga 2 O 3 heterostructure-based MODFETs in the literature, this heterostructure, which includes an ultrathin spacer layer and a back-barrier layer, would be an attractive epitaxial structure. [4][5][6][7][8][9][10] Hence, a comprehensive technology computeraided design (TCAD) analysis of this heterostructure design could provide new insights into the development of novel device structures and the current understanding of the device operation of…”

Section: Introductionmentioning

confidence: 99%

β‐(Al_0.17Ga_0.83)₂O₃/Ga₂O₃ Delta‐Doped Heterostructure MODFETs with an Ultrathin Spacer Layer and a Back‐Barrier Layer: A Comprehensive Technology Computer‐Aided Design Analysis

Atmaca

Cha

2022

Physica Status Solidi (a)

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The output characteristics of β‐(Al0.17Ga0.83)2O3/β‐Ga2O3‐based heterostructure modulation‐doped field‐effect transistors (MODFETs) with an ultrathin spacer layer and a back‐barrier layer are fitted with experimental measurements using a Silvaco ATLAS technology computer‐aided design (TCAD) simulation environment, and the calibration of the physical model and material parameters is realized. The effects of spacer layer thickness, barrier layer thickness, Si‐δ doping density, and insertion of a β‐Ga2O3 cap layer on the transfer and transconductance characteristics are examined. It is found that a β‐Ga2O3 cap layer on the top of the heterostructure can increase the sheet carrier density in the heterostructure. A breakdown analysis is also carried out to reveal the effects of several layers on the off‐state characteristics. A range of channel layer thicknesses from 15 to 25 nm is found to be the optimum range to avoid a high off‐state leakage current and earlier breakdown voltage.

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β-(Al_0.18Ga_0.82)₂O₃/Ga₂O₃ Double Heterojunction Transistor With Average Field of 5.5 MV/cm

Cited by 64 publications

References 30 publications

Ultra-Wide Band Gap Ga₂O₃-on-SiC MOSFETs

Ultra-Wide Band Gap Ga₂O₃-on-SiC MOSFETs

A Comprehensive Review on Recent Developments in Ohmic and Schottky Contacts on Ga₂O₃ for Device Applications

β‐(Al_0.17Ga_0.83)₂O₃/Ga₂O₃ Delta‐Doped Heterostructure MODFETs with an Ultrathin Spacer Layer and a Back‐Barrier Layer: A Comprehensive Technology Computer‐Aided Design Analysis

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β-(Al0.18Ga0.82)2O3/Ga2O3 Double Heterojunction Transistor With Average Field of 5.5 MV/cm

Cited by 64 publications

References 30 publications

Ultra-Wide Band Gap Ga2O3-on-SiC MOSFETs

Ultra-Wide Band Gap Ga2O3-on-SiC MOSFETs

A Comprehensive Review on Recent Developments in Ohmic and Schottky Contacts on Ga2O3 for Device Applications

β‐(Al0.17Ga0.83)2O3/Ga2O3 Delta‐Doped Heterostructure MODFETs with an Ultrathin Spacer Layer and a Back‐Barrier Layer: A Comprehensive Technology Computer‐Aided Design Analysis

Contact Info

Product

Resources

About

β-(Al_0.18Ga_0.82)₂O₃/Ga₂O₃ Double Heterojunction Transistor With Average Field of 5.5 MV/cm

Ultra-Wide Band Gap Ga₂O₃-on-SiC MOSFETs

Ultra-Wide Band Gap Ga₂O₃-on-SiC MOSFETs

A Comprehensive Review on Recent Developments in Ohmic and Schottky Contacts on Ga₂O₃ for Device Applications

β‐(Al_0.17Ga_0.83)₂O₃/Ga₂O₃ Delta‐Doped Heterostructure MODFETs with an Ultrathin Spacer Layer and a Back‐Barrier Layer: A Comprehensive Technology Computer‐Aided Design Analysis