α-CsPbBr₃ Perovskite Quantum Dots for Application in Semitransparent Photovoltaics

Abstract

As effective light absorbers in solar cells, CsPbI3 all-inorganic perovskite quantum dots (QDs) have received increasing attention, benefitting from their suitable optical band gap and thermal stability. However, the easy cubic to yellow orthorhombic phase transition hinders their further application in stable photovoltaic devices. CsPbBr3 QDs have been targeted as a promising material for ultrahigh voltage and stable solar cells. In this work, we first develop a simple yet efficient post-treatment method using guanidinium thiocyanate (GASCN), which is able to exchange the native capping ligands of CsPbBr3 QDs, thus improving the carrier transport properties through enhanced electrical coupling between QDs. Additionally, the morphology and crystalline properties of solid QD films are also improved. Therefore, simultaneously improved open-circuit voltage (V oc), short-circuit current density (J sc), and fill factor (FF) were obtained in the corresponding CsPbBr3 QD devices. Finally, the QD solar cells based on optimal hole-transporting layers delivered the highest efficiency exceeding 5% together with an ultrahigh V oc of 1.65 V, representing the most efficient CsPbBr3 QD solar cells to date. More importantly, the CsPbBr3 perovskite QD solar cells developed here exhibit excellent stability, ultrahigh voltage, and high transparency over the entire visible spectrum region, demonstrating their great potential in applications like solar windows of greenhouse and hydrogen generation driven by perovskite solar cells.

All-inorganic perovskite quantum dot light-emitting memories

“…1d ), consistent with the distance between the (200) planes indexed in the XRD measurement. Notably, the dimensions of CsPbBr 3 QDs with high crystallization are similar to the grain size of the perovskite films produced by the precursor solution with post-annealing treatment 26 – 28 , suggesting that the CsPbBr 3 QDs are suitable not only for the LEM device active layer, but also for many other perovskite optoelectronic devices 35 , 36 . A sharp emission peak centered at λ = 526 nm with a comparable photoluminescence (PL) intensity is observed in both the CsPbBr 3 QDs and PMMA/CsPbBr 3 QDs samples (Fig.…”

All-inorganic perovskite quantum dot light-emitting memories

“…1e), consistent with the distance between the (200) planes indexed in the XRD measurement. Notably, the dimensions of CsPbBr 3 QDs with high crystallization are similar to the grain size of the perovskite films produced by the precursor solution with post-annealing treatment 26−28 , suggesting that the CsPbBr 3 QDs are suitable not only for the LEM device active layer, but also for many other perovskite optoelectronic devices 32,33 . The elemental composition of the CsPbBr 3 QDs is also analyzed by using the energy dispersive Xray spectroscopy (EDS), as shown in homojunctions 34 .…”

Flexible, All‐Inorganic CsPbBr3 Perovskite Solar Cells Tailored by Heat‐resistant Muscovite Substrates

“…Unfortunately, the temperature is still about 160 °C, which is disadvantageous for flexible PSCs. Although the formation temperature can be reduced to room temperature by coating the CsPbBr 3 quantum dots (QDs) on the polymer based flexible substrates, [18] the slow charge transfer between QDs undoubtedly drags the efficiency. Therefore, the finding of heat‐resistant substrates is a persistent objective to make flexible, all‐inorganic CsPbBr 3 PSCs and even other flexible electronics.…”