α-Bi<sub>2</sub>O<sub>3</sub> photoanode in DSSC and study of the electrode–electrolyte interface

J, Jabeen Fatima M.; Niveditha, C V; Sindhu, S.

doi:10.1039/c5ra12760b

Cited by 58 publications

(2 citation statements)

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“…Bismuth oxide compound which is known for its additional wide range of applications as devices in optoelectronics 14 , as catalyst material 15 , as photoanodes 16 and as degrading materials 17 are prepared by various methods. As for example, the (δ-Bi 2 O 3 ) 0.93 (TiO 2 ) 0.07 nanocomposite thin films which were synthesized by pulsed laser technique onto glass substrates are found to be good optical material that can be used in fabricating optoelectronic devices 6 .…”

Section: Introductionmentioning

confidence: 99%

“…As for example, the (δ-Bi 2 O 3 ) 0.93 (TiO 2 ) 0.07 nanocomposite thin films which were synthesized by pulsed laser technique onto glass substrates are found to be good optical material that can be used in fabricating optoelectronic devices 6 . In addition, Bi 2 O 3 thin films which are prepared by the citrate-nitrate gel combustion method are reported to be good candidates as photoanodes 16 . In addition, Bi 2 O 3 films which are prepared by the hydrothermal method are suitable for the degradation of methyl orange 17 .…”

Section: Introductionmentioning

confidence: 99%

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Characterization of the Ge/Bi2O3 Interfaces

Alharbi

Qasrawi

2019

Mat. Res.

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In this article, the properties of the Ge/Bi 2 O 3 interfaces as microwave cavities are reported and discussed. The interface is composed of monoclinic Bi 2 O 3 films grown onto polycrystalline cubic Ge substrate. It is observed that consistent with the theoretical design of the energy band diagram, the experimental current-voltage characteristics of the Yb/Ge/Bi 2 O 3 /C hybrid device structure exhibits electronic switching property. In addition, the capacitance, resistance and microwave cutoff frequency spectral analysis in the frequency domain of 0.01-1.50 GHz revealed a frequency dependent tunability of the device. Moreover, while the Yb/Bi 2 O 3 /C interface displays negative capacitance effect, the Yb/ Ge/Bi 2 O 3 /C interfaces are also found to have the ability of altering the resistance up to three orders of magnitude. Such property allowed reaching a cut off frequency up to 116 GHz. The electronic features of the device indicated that the Ge/Bi 2 O 3 interfaces are attractive for production of negative capacitance field effect transistors and band pass/reject filters.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Characterization of the Ge/Bi2O3 Interfaces

Alharbi

Qasrawi

2019

Mat. Res.

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Effect of Bismuth Oxide Particles Size on the Thermal Excitation and Combustion Properties of Thermite Systems

Guo

Yao

et al. 2021

ChemistryOpen

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The influence of Bi 2 O 3 particles size at the sub‐micron scale on the thermal excitation threshold and combustion performance of nano‐thermite systems was investigated. Three formulas were designed and prepared, Al(100 nm)/Bi 2 O 3 (170 nm), Al(100 nm)/Bi 2 O 3 (370 nm) and Al(100 nm)/Bi 2 O 3 (740 nm). The samples were characterized and tested by SEM, XRD, and DSC techniques. Electrical ignition and combustion experiments were performed. The results showed that with the increase of the particle size of Bi 2 O 3 , in the case of slow linear heating, the exothermic heat decreased (1051.2 J g −1 , 527.3 J g −1 and 243.6 J g −1 ) and the thermal excitation threshold temperature increased (564.52 °C, 658.1 °C and 810.9 °C). Simultaneously, the state of the thermite reaction correspondingly changed to solid‐solid, liquid‐solid and liquid‐liquid thermite reaction. In the case of rapid heating , the increase in particle size increased the excitation current (0.561A, 0.710A and 0.837A). During the combustion process, the thermite system with the smallest Bi 2 O 3 particle size showed the largest combustion rate, and that with the largest particle size had the longest combustion duration.

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High performance fluoroelastomer composites filled with graphite and/or bismuth oxide for applications in gamma‐ray shielding

Magnere,

Toledo,

Yazdani‐Pedram

et al. 2024

Polymer Composites

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Fluoroelastomer‐based composites with nano‐sized bismuth oxide (B) and/or graphite (G) as fillers were prepared and characterized using FKM type 1 fluoroelastomer as a matrix. The effects of these fillers used singly or in combination on the crosslinking process, mechanical, thermal, dynamic mechanical, electrical, optical, and high‐energy radiation attenuation properties of FKM were investigated. The results showed that graphite significantly increased the moduli E50 (MPa) of FKM/G and FKM/GB composites by 1026% and 1459%, respectively, compared to FKM. On the other hand, bismuth(III) oxide did not affect the stiffness or elongation at break of FKM significantly. Graphite also imparted electrical conductivity to FKM (10−6 Scm−1), which was reduced by bismuth oxide to 10−12 Scm−1. Furthermore, the linear attenuation coefficients (μ), half‐value layer (HVL), and tenth‐value layer (THV) of pure FKM and FKM composites were evaluated using a 137Cs (662 keV) source, revealing that FKM/B and FKM/GB composites show 47.4% and 35.8% higher μ values, respectively, than FKM. Taking into consideration that the attenuation coefficient of FKM is 10 times higher than conventional elastomers such as natural rubber, these results indicate that thin flexible shielding against high electromagnetic radiation can be achieved to protect different sensitive equipment such as electronic devices used in nuclear power plants, gamma radiation facilities, telescopes, and artificial satellites.Highlights A fluoroelastomer‐based composite containing 40 phr of bismuth(III) oxide nanopowder presents a gamma attenuation coefficient 47.4% higher than that of the polymer matrix. A fluoroelastomer‐based composite containing bismuth(III) presents a band gap of 2.40 eV. Bismuth(III) oxide nanopowder hinders the electrical conductivity imparted by a conducting filler contained in the fluoroelastomer‐based composite. Fluoroelastomer‐based composites containing graphite or bismuth(III) oxide present enhanced mechanical and thermal properties.

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α-Bi₂O₃ photoanode in DSSC and study of the electrode–electrolyte interface

Abstract: Photoanode activity of nanoparticles of α-Bi2O3 in a DSSC is checked with two different dyes by considering the attachment of the dye on to the metal oxide surface and its effects on back recombination at the electrode–electrolyte interface.

Cited by 58 publications

References 35 publications

Characterization of the Ge/Bi2O3 Interfaces

Characterization of the Ge/Bi2O3 Interfaces

Effect of Bismuth Oxide Particles Size on the Thermal Excitation and Combustion Properties of Thermite Systems

High performance fluoroelastomer composites filled with graphite and/or bismuth oxide for applications in gamma‐ray shielding

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α-Bi2O3 photoanode in DSSC and study of the electrode–electrolyte interface

Abstract: Photoanode activity of nanoparticles of α-Bi2O3 in a DSSC is checked with two different dyes by considering the attachment of the dye on to the metal oxide surface and its effects on back recombination at the electrode–electrolyte interface.

Cited by 58 publications

References 35 publications

Characterization of the Ge/Bi2O3 Interfaces

Characterization of the Ge/Bi2O3 Interfaces

Effect of Bismuth Oxide Particles Size on the Thermal Excitation and Combustion Properties of Thermite Systems

High performance fluoroelastomer composites filled with graphite and/or bismuth oxide for applications in gamma‐ray shielding

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Product

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α-Bi₂O₃ photoanode in DSSC and study of the electrode–electrolyte interface