Zum Umsatz des Monomers Hexamethyldisiloxan in siliciumorganisches Schichtmaterial bei der Glimmpolymerisation

Abstract

Durch Ausmessen der Profile der Schichtabscheidungsrate entlang der Wand durchstromter langer Entladungsrohre lassen sich deren Abhangigkeiten von den verschiedenen Parametern diskutieren. Speziell die Auswertung des Umsetzungsgrades liefert wichtige Aussagcn zum Mechanismus der Glimmpolymerschichtbildung. R eonpoey o Eowepcuu .Nouoaepa zemafiemuducunoxcana e icpefincHuiLopzaHuuecicym nsewcy npu noau.wepucayuu e msemyew pa3pade npoKasKe ~e p e s Hee peaKqHoHHux r a 3 0~. 06cy?~AaeTCFI ~~B H C H M O C T~ pacnpeAeneHm CKOPOCTH pocTa nneHKH npeACTaBJIeHbI pe3yJIbTaTbI H3MepeHHh CKOPOCTH pOCTa TOHIEHX nJIeHOK BAOJIb J(JIHHH0ft pa3pFIRHOa TPY~KH IlpH BAOJIb TPY6KH OT pa3JIHqHbIX IIapaMeTpOB. I' fCCJIeAOBaHHe CTeneHEl IEOHBepCHH MOHOMepa IX03BOJIFIeT CReJIaTb BaXHbIe BbIBOAbI 0 MeXaHB3Me 06pa30BaHHFI IIOJIHMepHOfi IIJIeHKH B TJIeIoqeM pa3pHp3. On the conversion rate of the monomer hexamethyldisiloxane to siliconorganic thin films by glow polymerizationThe results of measurements of the thin film growth rate along the wall of long discharge tubes with flowing gas are presented. The dependence of the growth rate distribution along the tube wall on various parameters is discussed. The analysis of the conversion rate of the monomer to thin film material leads t o important conclusions on themeclianism of glow polymer film formation.

Evidence of ionic film deposition from single‐filament dielectric barrier discharges in Ar–HMDSO mixtures

“…For the latter applications, hexamethyldisiloxane (HMDSO) has frequently been employed as a precursor ("monomer") to investigate the deposition process ("plasma polymerization") and film properties, respectively. [2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17] In contrast to low-pressure PECVD of HMDSO, where the monomer is a major if not the only component of the gas phase, [18][19][20][21][22][23][24][25][26][27][28][29][30][31][32][33][34][35][36] carrier gases like argon, helium, or nitrogen are generally essential for atmospheric-pressure plasmas to transport the precursor, with fractions up to 10,000 ppm, into the plasma zone. Whereas noble gases and N 2 are inert when used as carrier gases for thermal CVD, these gases may have a considerable impact on the plasma chemistry in the case of PECVD processes.…”

Large‐area atmospheric pressure dielectric barrier discharges in Ar–HMDSO mixtures: Experiments and fluid modelling

“…Although earlier literature mostly dealt with the film deposition from pure HMDSO or HMDSO mixed with different carrier gases using low‐pressure nonthermal plasmas, there has been growing interest in its plasma polymerisation at atmospheric pressure more recently. In addition to atmospheric pressure plasma jets, which have been developed for a localised deposition of organosilicon thin films, dielectric barrier discharges (DBDs) have mostly been employed as a source for plasma‐enhanced chemical vapour deposition processes .…”

Plasma Processes in Activated Thin Film Deposition

“…This is possible, because the ionization energy of HMDS molecule of 9.6 eV is smaller than metastable level of 11.5 eV of argon atoms [38]. It was observed by SCHULZ [35] that the transformation of monomer to the thin film material is maximum under conditions, where the action of Penning effect is supposed. As demonstrated the Penning effect in this discharge acts if the admixture of monomer is sufficient small [39].…”