Abstract:Here we report the ZrO2 - based Negative capacitance (NC) FETs with 45.06 mV/decade subthreshold swing (SS) under ±1 V V GS range, which can achieve new opportunities in furture voltage-scalable NCFET applications. The ferroelectric-like behavior of the Ge/ZrO2/TaN capacitors is proposed to be originated from the oxygen vacancy dipoles. The NC effect of the amorphous HfO2 and ZrO2 films devices can be proved by the sudden drop of gate leakage, the negative differential resistance (NDR) phenomenon, the enhancem… Show more
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