2012
DOI: 10.1364/ao.51.002129
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ZrO2 thin-film-based sapphire fiber temperature sensor

Abstract: A submicrometer-thick zirconium dioxide film was deposited on the tip of a polished C-plane sapphire fiber to fabricate a temperature sensor that can work to an extended temperature range. Zirconium dioxide was selected as the thin film material to fabricate the temperature sensor because it has relatively close thermal expansion to that of sapphire, but more importantly it does not react appreciably with sapphire up to 1800°C. In order to study the properties of the deposited thin film, ZrO 2 was also deposit… Show more

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Cited by 22 publications
(10 citation statements)
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References 13 publications
(11 reference statements)
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“…2b. The fabricated sensor showed an activation energy of ∼0.15 eV which is comparable to thin film-based sensors and previously reported multi-NW network-based devices [32,33]. The activation energy depends on the network of the nanowires which influences the electron scattering and the metalsemiconductor contact.…”
Section: B Electrical Characterisation Of Yarn Based Temperature Sensorsupporting
confidence: 75%
“…2b. The fabricated sensor showed an activation energy of ∼0.15 eV which is comparable to thin film-based sensors and previously reported multi-NW network-based devices [32,33]. The activation energy depends on the network of the nanowires which influences the electron scattering and the metalsemiconductor contact.…”
Section: B Electrical Characterisation Of Yarn Based Temperature Sensorsupporting
confidence: 75%
“…found that ZrO 2 thin film also had relatively close CTE with sapphire, but did not react with sapphire up to 1800 °C. [ 101 ] The ZrO 2 thin‐film sensor was demonstrated to work up to 1200 °C by tracking the fringe from the FP cavity.…”
Section: Applicationsmentioning
confidence: 99%
“…In turn, the change in OPD results in a shift of the peak wavelength and the peak position m can be derived as follows [5,6]:…”
Section: Sensors Fabrication and Principlementioning
confidence: 99%
“…When temperature changes on the thin film, m shall shift accordingly, as is derived by material properties of the thin-film as follows [5,6]: where ˛ d is the equivalent linear thermal expansion coefficient of ZrO 2 /Al 2 O 3 /ZrO 2 (ZAZ) dielectric film and ˛ n is the equivalent linear temperature coefficient of the refractive index of the film. Thus, the increase of surrounding temperature will result in the shift of interference spectra according to Eqs.…”
Section: Sensors Fabrication and Principlementioning
confidence: 99%
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