Zone-boundary phonons in hexagonal and cubic GaN

Siegle, H.; Kaczmarczyk, G.; Filippidis, L.; Litvinchuk, A. P.; Hoffmann, A.; Thomsen, C.

doi:10.1103/physrevb.55.7000

Cited by 304 publications

(253 citation statements)

References 14 publications

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“…[65]. By adjusting our model to results of ab initio calculations [67,68] we obtained corresponding results.…”

Section: Zone-boundary Phonons In Gan and Alnmentioning

confidence: 90%

“…From the results of our group-theoretical analysis the following conclusions can be drawn (for details vide Ref. [65]): Overtones always contain the representation A 1 while combinations of phonon states belonging to different irreducible representations never contain A 1 .…”

Section: Zone-boundary Phonons In Gan and Alnmentioning

confidence: 96%

“…12 and Ref. [69] where the experimental work is compared to ab initio calculations and the results of [65,70,71].…”

Section: Zone-boundary Phonons In Gan and Alnmentioning

confidence: 99%

“…We used all necessary scattering geometries to obtain selection rules and performed a calculation of the dispersion curves [64,65]. In order to derive the selection rules for second-order Raman scattering we carried out a grouptheoretical analysis.…”

Section: Zone-boundary Phonons In Gan and Alnmentioning

confidence: 99%

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Lattice dynamics in GaN and AlN probed with first‐ and second‐order Raman spectroscopy

Haboeck

Siegle

Hoffmann

et al. 2003

phys. stat. sol. (c)

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We present a selection of our contributions to basic research on the lattice dynamical properties of group-III nitrides and their alloys. We used first-order Raman scattering to determine the zone-center phonons and their dependence on structural attributes such as stress, chemical composition, impurities, and doping. Results on the angular dispersion of the polar modes, strain distribution, coupled LO-phonon plasmon modes, multi-mode behavior in Al x Ga 1-x N, and the quantitative determination of the phase purity of cubic and hexagonal GaN are shown. Second-order Raman-scattering experiments on GaN and AlN provide information on the vibrational states throughout the entire Brillouin zone. Based on a comparison of experimental data and calculated phonon-dispersion curves we assigned the observed structures to particular phonon branches and points in the Brillouin zone. We also discuss the behavior of the optical modes under large hydrostatic pressure. 1 Introduction During the last decade group-III nitrides have been an object of increasing research because of their interesting physical properties such as an adjustable band gap (1.9 eV to 6.2 eV) by varying the composition of the alloys [1] and application as basic materials for optoelectronic devices working in the blue and ultraviolet spectral region [2][3][4]. In particular GaN and AlN can withstand high temperatures and have large piezoelectric constants which makes them suitable for applications in highfrequency devices, sensors and low-dimensional structures [5,6].Although basic information about group-III nitrides e.g. crystal-and band structure have been available for a decade several details still remained unclear. In the following review of our work we present results of first-and second-order Raman investigations on various GaN, AlN, and Al x Ga 1-x N samples and point out some remarkable details of the structural and optical properties of these materials.

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“…[65]. By adjusting our model to results of ab initio calculations [67,68] we obtained corresponding results.…”

Section: Zone-boundary Phonons In Gan and Alnmentioning

confidence: 90%

Section: Zone-boundary Phonons In Gan and Alnmentioning

confidence: 96%

“…12 and Ref. [69] where the experimental work is compared to ab initio calculations and the results of [65,70,71].…”

Section: Zone-boundary Phonons In Gan and Alnmentioning

confidence: 99%

Section: Zone-boundary Phonons In Gan and Alnmentioning

confidence: 99%

See 2 more Smart Citations

Lattice dynamics in GaN and AlN probed with first‐ and second‐order Raman spectroscopy

Haboeck

Siegle

Hoffmann

et al. 2003

phys. stat. sol. (c)

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“…One extra peak seen at 260 cm −1 is attributed to the zone-boundary phonon activated by the surface disorders and finite-size effect [22]. Another peak at 420 cm −1 is attributed to the overtones of transverse acoustic phonons [23,24]. The Raman mode at 300 cm −1 is ascribed to the cation vacancy (Ga vacancy), a host-lattice atom [25,26].…”

Section: Resultsmentioning

confidence: 99%

Ga-vacancy-induced room-temperature ferromagnetic and adjusted-band-gap behaviors in GaN nanoparticles

et al. 2013

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Room-temperature ferromagnetism has been found in Ga-deficient GaN grown using the direct reaction of Ga 2 O 3 powder with NH 3 gas. The observed magnetism in GaN induced by Ga vacancies is investigated both experimentally and theoretically. First-principles calculations reveal that the spontaneous spin polarization is created by the 3.0 μ B local moment for GaN and magnetism originates from the polarization of the unpaired 2 p electrons of N surrounding the Ga vacancy. At the same time, the band gap can be also adjusted by changing the Ga-vacancy concentration.

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Phonons in Wurtzite Aluminum Nitride

Schwoerer-Böhning¹,

Macrander

Pabst

et al. 1999

phys. stat. sol. (b)

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We present data obtained with inelastic x-ray scattering measurements of the phonon dispersions in hexagonal aluminum nitride (AlN) along all three high-symmetry directions. These are the first such data for AlN. Presently available single crystals are large enough to perform an inelastic x-ray scattering experiment. The results are compared with first-principles calculations. We find excellent agreement between the data and the calculations.

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Zone-boundary phonons in hexagonal and cubic GaN

Cited by 304 publications

References 14 publications

Lattice dynamics in GaN and AlN probed with first‐ and second‐order Raman spectroscopy

Lattice dynamics in GaN and AlN probed with first‐ and second‐order Raman spectroscopy

Ga-vacancy-induced room-temperature ferromagnetic and adjusted-band-gap behaviors in GaN nanoparticles

Phonons in Wurtzite Aluminum Nitride

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