“…Several methods have been explored for the preparation of ZTP in form of crystals and thin films using elemental Zn, Sn and P or in combination of Zn-P and Sn-P compounds as starting materials. They include melt solution growth [4,[13][14][15], flux method [9,10], thermal or electron-beam evaporation [2,11,12,16,17], molecular beam epitaxy [5], liquid phase epitaxy [18], phosphidation of Zn-Sn layers [8,19] and others [20], generally, involving high temperature ([ 600°C) and/or vacuum. In some of these methods, the processes are very tricky due to the complexity in thermodynamic phase formation and a large difference in the vapor pressure between Zn and Sn [21,22].…”