ZnSnO₃ Quantum Dot/Perylene Diimide Supramolecular Nanorod Heterojunction Photocatalyst for Efficient Phenol Degradation

Abstract

A stable 0D/1D photocatalyst constructed by ZnSnO3 quantum dots (QDs) and perylene diimide (PDI) supramolecular nanorods was successfully achieved via a simple in situ deposited method through an electrostatic attraction build-up strategy and exhibited marvel phenol degradation efficiency under visible-light irradiation. By engineering controllable 0D/1D hetero-interfaces, on the one hand, most of the light absorption sites from the PDI component remained exposed and, on the other hand, efficient interfacial charge transfer driven by a giant built-in electric field between the two components successfully led to great enhancement in charge separation. Importantly, besides the evidenced excellent structure and morphology stability, suppressed production of PDI·– after forming the heterostructure was also proved to be responsible for its robust cyclic photocatalytic activity. This stable and efficient visible-light-driven photocatalyst showed great development potential for removal of phenol pollutants with low concentrations.

CuI/BaSnO3 Quantum Dot/ZnSnO3 Perovskite-based Transparent p–n Junction for Photovoltaic Enhancement

“…The obtained perovskite ZnSnO 3 film exhibited only a weak peak at 26.48° corresponding to the (012) plane (Figure ) (PDF#00-028-1486). , Interestingly, this peak was observed in all formed p–n junctions, indicating the good stability of the perovskite ZnSnO 3 film during continuous sputtering and iodization. Owing to the smaller thickness and grain size of the perovskite ZnSnO 3 film, the diffraction peaks of ZnSnO 3 were lower in intensity than CuI, which was further characterized using high-resolution transmission electron microscopy (TEM). , The CuI/ZnSnO 3 p–n junction exhibited a series of peaks at 25.23, 29.19, 42.02, 49.66, 61.05, 67.24, and 76.88° corresponding to the (111), (200), (220), (311), (400), (331), and (422) planes of CuI (PDF#04-007-2948). − While the single-perovskite BaSnO 3 QDs displayed peaks at 31.03, 44.34, 54.97, 64.33, and 72.83°, corresponding to the (110), (200), (211), (220), and (221) planes (PDF#97-067-0659), − these peaks were hardly observed in the CuI/ZnSnO 3 p–n junctions owing to their low concentration.…”

“…The TEM image revealed the presence of smaller nanoparticles with a diameter of ∼15–20 nm on the surface of the ZnSnO 3 film (Figure a), indicating the successful deposition of BaSnO 3 QD. The lattice spacing of 0.290 and 0.338 nm corresponded to the (110) plane of the perovskite BaSnO 3 QD and the (012) plane of the perovskite ZnSnO 3 film (Figure b,c). ,,− …”

“…As a representative perovskite structure, the wide-bandgap ZnSnO 3 -based transparent photovoltaic device − possesses unique electronic properties that allow for abundant physical and chemical modifications at its surfaces or interfaces. These modifications can further enhance the PCE, as demonstrated by various studies.…”

Rational Design of PDI‐Based Linear Conjugated Polymers for Highly Effective and Long‐Term Photocatalytic Oxygen Evolution

“…Meanwhile, their difference was also visually reflected by the EIS results, where the lowest charge transfer resistance (426.2 Ω) of Oxamide‐PDI due to its small π – π stacking distance and high crystallinity was revealed based on the equivalent circuit model. [ 21 ]…”

“…Meanwhile, their difference was also visually reflected by the EIS results, where the lowest charge transfer resistance (426.2 Ω) of Oxamide-PDI due to its small 𝜋-𝜋 stacking distance and high crystallinity was revealed based on the equivalent circuit model. [21] We further used the surface photovoltage (SPV) technique to get an understanding of the type of semiconductor, carrier separation, and transfer behavior for the as-prepared samples (Figure 3f). Generally, the intensity of the SPV signal can be decided by the density of separated photogenerated carriers and their separation distance, thus providing insight into the separation efficiency of charge carriers with the assistance of a built-in electric field.…”