ZnSe nanocrystalline thin films deposition on Si substrate by thermionic vacuum arc

Özkan, Mehmet; Ekem, N.; Balbağ, M. Zafer; Pat, Şuat

doi:10.1177/1464420711433095

Cited by 4 publications

(6 citation statements)

References 16 publications

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“…2 (c) and (d) shows FESEM images of the surface and cross-section of the evaporated ZnSe film on Si. The evaporated film shows more densely packed structures than the sputtered film, but contains some random circular spots which were also observed in [24][25]. These may be caused by "spitting", where a sudden release of impurities such as carbon or oxygen trapped in the source material leads to ejection of larger pieces of source material towards the samples.…”

Section: Morphology and Microstructurementioning

confidence: 54%

Optical quality ZnSe films and low loss waveguides on Si substrates for mid-infrared applications

Mittal¹,

Sessions²,

Wilkinson³

et al. 2017

Opt. Mater. Express

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Zinc Selenide (ZnSe) is a promising mid-infrared waveguide material with high refractive index and wide transparency. Optical quality ZnSe thin films were deposited on silicon substrates by RF sputtering and thermal evaporation, and characterized and compared for material and optical properties. Evaporated films were found to be denser and smoother than sputtered films. Rib waveguides were fabricated from these films and evaporated films exhibited losses as low as 0.6 dB/cm at wavelengths between 2.5 µm and 3.7 µm. The films were also used as isolation/lower cladding layers on Si with GeTe 4 as the waveguide core and propagation losses were determined in this wavelength range.

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Section: Morphology and Microstructurementioning

confidence: 54%

Optical quality ZnSe films and low loss waveguides on Si substrates for mid-infrared applications

Mittal¹,

Sessions²,

Wilkinson³

et al. 2017

Opt. Mater. Express

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“…Metals such as Cu, Ag, Au, C, W, and B have been used to coat different substrates. Moreover, semiconductor, superconductor, and anti-reflective materials were coated on different substrates [5][6][7][8][9][10]. Thin films deposited with TVA show interesting properties such as homogeneity, purity, low roughness, good adhesion, nanostructure, and formation of quantum shapes in 2-5 min.…”

Section: Methodsmentioning

confidence: 99%

“…Generally, crucibles are made from tungsten, molybdenum, tantalum, and glassy carbon. The focused (high voltage) thermo-electrons from the electron gun bombard the anode, melting the anode materials, which then evaporate in the interelectrodic space in the vacuum chamber [5][6][7][8][9][10]. As the accelerator voltage is increased, a bright discharge is established in the interelectrodic space.…”

Section: Methodsmentioning

confidence: 99%

“…Depositions on a thin film using the TVA method have a number of advantages. These advantages include compactness, homogeneity and nano-structure, along with low roughness, good adhesion, a high deposition rate and a short processing time (approximately 1-2 nm/sec) [5][6][7][8][9][10]. For GaAs deposition, the deposition rate is reached at 13 nm/ sec.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Direct and fast growth of GaAs thin films on glass and polyethylene terephthalate substrates using a thermionic vacuum arc

Pat

Korkmaz

Özen

et al. 2015

J Mater Sci: Mater Electron

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Using a thermionic vacuum arc, single-crystal gallium arsenide (GaAs) layers of micron thickness were grown on PET and glass substrates in 2 min. We present a new deposition mechanism and parameters for GaAs thin films produced in a very short time. Crystal direction was found to be (111) plane for the GaAs/PET sample and (022) plane and (133) plane for the GaAs/glass sample, respectively. The average roughness values of the deposited thin films were determined to be approximately 30 nm for GaAs/PET and 60 nm for GaAs/glass. The structures can be seen clearly in field emission scanning electron microscopy and atomic force microscopy. The obtained optical band is nearly the same with literatures values of the GaAs. Although produced structures in different crystal formations, only aggregations dimensions and absorbance of the layers were changed. Obtained refractive index values are nearly same with database info.

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“…The refractive index of the 167 nm thick ZnS layer was estimated as 2.05 and the bandgap 3.7 eV. Similar experiment, but with deposition of ZnSe binary semiconductor on a Si substrate was performed in [182]. This time a refractive index of the deposited layer around 2.5 was found.…”

Section: Deposition Of the Semiconductorsmentioning

confidence: 77%

Thermionic Vacuum Arc—A Versatile Technology for Thin Film Deposition and Its Applications

et al. 2020

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This review summarizes the more-than-25-years of development of the so-called thermionic vacuum arc (TVA). TVA is an anodic arc discharge in vapors of the material to be deposited; the energy for its melting is delivered by means of a focused electron beam. The resulting material ions fall at the substrate where they form a well-adhesive layer; the ion energy is controllable. The deposited layers are, as a rule, free from droplets typical for cathodic arc deposition systems and the thermal stress of the substrates being coated is low. TVA is especially suitable for processing refractory metals, e.g., carbon or tungsten, however, in the course of time, various useful applications of this system originated. They include layers for fusion application, hard coatings, low-friction coatings, biomedical-applicable films, materials for optoelectronics, and for solid-state batteries. Apart from the diagnostic of the film properties, also the diagnostic of the TVA discharge itself as well as of the by TVA generated plasma was performed. The research and application of the TVA proceeds in broad international collaboration. At present, the TVA technology has found its firm place among the different procedures for thin film deposition.

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ZnSe nanocrystalline thin films deposition on Si substrate by thermionic vacuum arc

Cited by 4 publications

References 16 publications

Optical quality ZnSe films and low loss waveguides on Si substrates for mid-infrared applications

Optical quality ZnSe films and low loss waveguides on Si substrates for mid-infrared applications

Direct and fast growth of GaAs thin films on glass and polyethylene terephthalate substrates using a thermionic vacuum arc

Thermionic Vacuum Arc—A Versatile Technology for Thin Film Deposition and Its Applications

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