ZnSe:Mn in AC thin film electroluminescence devices

Mach, Robert H.; Kalben, J. von; Gericke, W.; Müller, Gerd; Reinsperger, G.-U.

doi:10.1002/pssa.2210750219

Cited by 11 publications

(2 citation statements)

References 13 publications

(1 reference statement)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In Ref. [25] it was reported that the EL intensity of the ZnSe:Mn device was substantially lower than that of ZnS:Mn, but in Ref. [8] increased luminance of the ZnS 1Àx Se x :Mn devices were reported as a consequence of band gap engineering by addition of Se.…”

Section: Article In Pressmentioning

confidence: 96%

See 1 more Smart Citation

XPS and electroluminescence studies on SrS1−xSex and ZnS1−xSex thin films deposited by atomic layer deposition technique

Ihanus

Lambers

Holloway

et al. 2004

Journal of Crystal Growth

View full text Add to dashboard Cite

Section: Article In Pressmentioning

confidence: 96%

“…Earlier EL studies on ZnS 1Àx Se x :Mn and ZnSe:Mn thin films have shown that the emission color of Mn does not change due to the addition of Se [8,25]. In Ref.…”

Section: Article In Pressmentioning

confidence: 98%

XPS and electroluminescence studies on SrS1−xSex and ZnS1−xSex thin films deposited by atomic layer deposition technique

Ihanus

Lambers

Holloway

et al. 2004

Journal of Crystal Growth

View full text Add to dashboard Cite

Basics of Electron-Impact-Excited Luminescence Devices)

Müller¹

1984

Phys. Stat. Sol. (a)

Self Cite

View full text Add to dashboard Cite

Alternating current driven thin film electroluminescence displays (ac TFD) with an MISIM (metal‐insulator‐semiconductor‐insulator‐metal) structure haGe gained much interest by technical and commercial success on the one and novel physical features on the other hand. Because of very recent progress the basics appear now well‐established: tunnel emission from interface states, loss‐free acceleration, impact excitation and mainly radiative deexcitation of dopants, carrier multiplication, and capture by interface states are the six main processes involved. Experimental evidence can be given for most of them. Afirst time discussion, of the details of time behaviour gives further support to the simple model but clearly points to a necessary further sophistication by taking into account operational inhomogeneities.

show abstract

Efficiency and Saturation in AC Thin Film EL Structures

Mach¹,

Müller²

1984

Phys. Stat. Sol. (a)

Self Cite

View full text Add to dashboard Cite

The maximum achievable brightness of ac thin film electroluminescent devices is determined by the maximum transferable charge and the maximum efficiency of electroluminescence η. The first is controlled by the charge at breakdown of the insulator, whereas the latter is determined by the properties of the semiconductor layer. By a factorization into partial efficiencies η = ηexcηoptηlum characterizing the three independent fundamental processes involved in these structures, (i) impact excitation of centers, (ii) radiative decay of excited centers, and (iii) outcoupling of emitted photons, some insight ino the limiting physical mechanisms is obtained. The efficiency in ZnS : Mn is limited via ηlum by an influence of non‐radiative decay channels which increases with the Mn concentration N and the concentration of excited centers N* In the concentration range (N) of practical interest ηexc is shown to be controlled by σMn2+N, where σMn2+ is the impact cross‐section of Mn2+. The limiting factor is the cross section which is determined by a very straight‐forward evaluation from experimental data to be σMn2+ = 3.7 × 10−16 cm2. The time behaviour of ηexc within the excitation pulse is measured with a submicrosecond resolution and the results give some hints on spatial inhomogeneities — grown‐in and operational ones. Numerical estimates of the maximum achievable brightness show that there is not much improvement possible within the ZnS: Mn system using present day insulator technology.

show abstract

ZnSe:Mn in AC thin film electroluminescence devices

Cited by 11 publications

References 13 publications

XPS and electroluminescence studies on SrS1−xSex and ZnS1−xSex thin films deposited by atomic layer deposition technique

XPS and electroluminescence studies on SrS1−xSex and ZnS1−xSex thin films deposited by atomic layer deposition technique

Basics of Electron-Impact-Excited Luminescence Devices)

Efficiency and Saturation in AC Thin Film EL Structures

Contact Info

Product

Resources

About