ZnSe‐based laser structures for electron‐beam pumping with graded index waveguide

Abstract

Electron beam pumped (EBP) laser heterostructures with graded index waveguide (GIW) have been grown by molecular beam epitaxy and studied in detail. The maximum achieved output pulse power per facet is as high as 8.5 W at an electron beam energy of 16 kV. No saturation of output power with the increase of electron beam current as well as no suitable degradation of GIW EBP laser structures have been observed. The ways for further optimizations of GIW heterostructures are discussed. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Low-threshold green laser heterostructures with Zn(Mg)SSe/ZnSe graded-index superlattice waveguide: Structural and optical properties

“…The alternately strained SLs allow gradual variation in the band gap, avoiding strain relaxation in the GIW structure as a whole at constant Mg, ZnS, Zn, and Se fluxes. 19 X-ray diffraction ͑XRD͒, transmission electron microscopy ͑TEM͒ techniques, as well as scanning electron microscopy were used to characterize structural properties of the laser heterostructure. The TEM studies were performed in a cross-section geometry using a Philips EM-420 microscope at 100 kV.…”

“…19 Laser parameters of the structure were studied at RT in a wide range of excitation intensities and at different cavity lengths. All studied samples demonstrated the TE polarization of laser emission and only one maximum in the far field pattern, evidencing laser action on the fundamental transversal mode.…”

Structural and optical optimization of ZnSe‐based laser heterostructures with graded index waveguide

“…Recently the green II-VI/III-N injection laser converters pumped by commercial pulse III-N LDs [2] as well as the ZnSe-based low threshold EBP lasers [3] have been demonstrated. The essential step in improving their output characteristics was made by the incorporation of the superlattice (SL)-based graded index waveguide (GIW) [4]. Using of the GIW laser structure as an active element of the II-VI/III-N injection laser converter resulted in the noticeable decrease of threshold pumping power (~0.32 W) and the enhanced quantum conversion efficiency up to 25.4% [5].…”

“…Using of strained short period Zn(Mg)SSe/ZnSe SLs in GIW provides precise band gap reduction to the QD active region just by variation of the well-to-barrier width ratio and the SL period, keeping constant all the MBE growth parameters (Mg and Zn fluxes, T S ). Optimization of the carrier transport through the SL GIW can be easily done by calculations of the SL miniband alignment [4], employing the infinite onedimensional SL approximation and a model-solid theory [9]. The resultant band diagram of the GIW laser heterostructure with five CdSe/ZnSe QD sheets in the active region is presented schematically in Fig.…”

Comparative studies of fission fragment and electron beam driven solid-state lasers and reactor-laser system modeling

“…Much of the research on EPL through the 80s and 90s centered on binary and tertiary materials, modern research has concentrated on quantum well [78][79][80][81][82] and quantum dot [78,82] heterostructures. Modern research in EBL is virtually nonexistent due to the superior efficiency and simplicity of injection and flash lamp pumped lasers.…”