ZnS_1-xO_x:Mn and ZnS_1-xSe_x:Mn as thin-film electroluminescent materials

Abstract

Thin films of ZnS,-,O, and ZnS,-,Se, have been deposited on to p-Si by radio-frequency sputtering either a solid target of ZnS in Ar/02 mixtures or solid targets of ZnS and ZnSe. Both types of ternary compound are more conducting than pure ZnS, and t h u s potentially useful for DC electroluminescence. The ZnS,_,O,films prepared in 02/Ar mixtures greaterthan 2% 0, are too conducting for electroluminescent devices; gas mixtures containing only fractional percentages of O2 will yield appropriate conductivities. For ZnS,-,Se, films the ideal value of x lies between 0.01 and 0.05.

Band-gap engineering of ZnO1−xSx films grown by rf magnetron sputtering of ZnS target

“…[16,17]. Other authors [11] reported about composition dependent band gap energy Eg(х) of single-phase ZnO1-хSх films within the whole composition range.…”