ZnS/SiO2 Passivation Layer for High-Performance of TiO2/CuInS2 Quantum Dot Sensitized Solar Cells

Abstract

Suppressing the charge recombination at the interface of photoanode/electrolyte is the crucial way to improve the quantum dot sensitized solar cells (QDSSCs) performance. In this scenario, ZnS/SiO 2 blocking layer was deposited on TiO 2 /CuInS 2 QDs to inhibit the charge recombination at photoanode/electrolyte interface. As a result, the TiO 2 /CuInS 2 /ZnS/SiO 2 based QDSSCs delivers a power conversion efficiency (η) value of 4.63%, which is much higher than the TiO 2 /CuInS 2 (2.15%) and TiO 2 /CuInS 2 /ZnS (3.23%) based QDSSCs. Impedance spectroscopy and open circuit voltage decay analyses indicate that ZnS/SiO 2 passivation layer on TiO 2 /CuInS 2 suppress the charge recombination at the interface of photoanode/electrolyte and enhance the electron lifetime.

A green synthesis of CuInS2/MIL-101(Cr) nanocomposite with efficient visible light induced photocatalytic activity

“…The charge transfer rates of the CIS, MIL-101(Cr) and CIS@MIL-101(Cr) samples were determined by Electrochemical impedance spectroscopy (EIS). In figure 10(a), the Nyquist plot of the CIS sample shows the smallest semicircle, confirming the fastest charge transfer rate [43,44]. The CIS@MIL-101(Cr) sample has a Nyquist plot with a smaller semicircle than that of the MIL-101(Cr) sample indicating an improved charge transfer rate.…”