ZnS Flms Deposited by the Pulse Plating Technique and Their Characteristics

Abstract

Zinc sulphide thin films were deposited by the pulse plating technique at a duty cycle of 20 % and different deposition current densities in the range 50- 300 mAcm-2. X-ray diffraction studies indicated the films to be polycrystalline with wurtzite structure. Direct optical band gap in the range of 3.6 - 4.0 eV was obtained for the films deposited at different deposition current densities. AES studies indicated a Zn/S ratio of 1.02 - 1.04. The room temperature resistivity values varied in the range of 3.5 - 17 ohm cm as the deposition current density decreases. Photoluminescence emission peak was observed at 388nm at room temperature for an excitation of 325 nm.