ZnS , CdS , and Zn1 − x Cd x  S  Thin Films Deposited by the Successive Ionic Layer Adsorption and Reaction Process

Abstract

The results of the structural, optical, and electrical characterization of ZnS, CdS, and Zn~_~CdxS films grown by the successive ionic layer adsorption and reaction process are presented. Polycrystalline cubic ZnS and hexagonal CdS films grown on glass and on indium-tin oxide covered glass have mean crystallite sizes Dl = 6.5 nm and Dll = 4 nm, and Dl = 30 nm and DII = 15 nm, respectively, perpendicular and parallel to the film. The pure cubic 3C phase is obtained from x = 0 up to x = 0.75 and the pure hexagonal 2H phase from x ~ 0.75 up to x = 1. Texturized heteroepitaxial films of hexagonal CdS have been grown on (111), (001), and (110) Ge, on (1 1 1), (001), an_d_(ll0) GaAs and on (1 1 1) InP substrates. Strongly texturized heteroepitaxial films of cubic ZnS have been grown on (1 1 1) InP and on (001) GaAs. Polycrystalline ZnS films consist of densely packed microcrystalline fibrous grains belonging to the transition zone T in Thornton's structural zone model. Polycrystalline CdS films show a strong <0001> preferred orientation and have a compact columnar structure belonging to Thornton's zone 2. ZnS and CdS films have a refractive index ranging from 2.1 to 2.25 and from 2.15 to 2.35, respectively.

Structural and optical characteristics of SnS thin film prepared by SILAR

“…SILAR can be used for large area thin film deposition and the thickness can be controlled by the number of dipping. In mid-1980's Nicolau first introduced SILAR method [10]. SILAR is a new version of CBD and is often called modified CBD.…”

Preparation of ZnO film on p-Si and I-V characteristics of p-Si/n-ZnO

“…In SILAR, thin films are obtained by alternate dipping of the substrate into separately placed cationic and anionic precursors for reaction at chosen temperatures. The technique was given the name SILAR by Nicolau et al 9 since it involves adsorption of a layer of complex ion on the substrate followed by reaction of the adsorbed ion layer.…”

N,N’-diisopropylthiourea and N,N’-dicyclohexyl-thiourea zinc(II) complexes as precursors for the synthesis of ZnS nanoparticles

“…In this study, zinc sulphide nanoparticles were prepared using substituted alkylthiourea complexes, [ZnCl 2 (CS(NHC 6 …”

“…[2][3][4][5] These unique properties have led to many applications, such as optical coatings, solid-state solar cell windows, electro-optic modulators, photoconductors, field-effect transistors, sensors and transductors, as well as light-emitting applications. 6 As efficient phosphors, ZnS particles have been widely implicated in flat-panel displays, 7 thin-film electroluminescent devices and infrared windows. 8 Nanosized ZnS and manganese-doped ZnS have been prepared by precipitation methods, 9 in structured media such as polymers and gel films, 10 and by using single-molecule precursors.…”