ZnO Wurtzite Single Crystals Prepared by Nanorod-Assisted Epitaxial Lateral Overgrowth

Kim, Dong Chan; Lee, Ju Ho; Cho, Hyung Koun; Kim, Jae Hyun; Lee, Jun Young

doi:10.1021/cg900907d

Cited by 12 publications

(4 citation statements)

References 27 publications

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“…At the very beginning, hexagonal cross‐section ZnO nanowires are grown vertically on the sapphire substrate. With the increase of the growth time, the length and density of the ZnO nanowires increase, leading to a film‐like ZnO formed on top of the vertically aligned nanowires 21. The transformation from 1D nanowires to a 2D film is similar to the characteristic of epitaxial lateral overgrowth, which has been found for material growth of GaN and ZnO 22, 23.…”

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confidence: 62%

Factors That Control Zeolite L Crystal Size

Itani

Bozhilov

Clet

et al. 2011

Chemistry A European J

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Time-series hydrothermal syntheses from two organic-cation-free gels with different compositions were employed to study the factors that control the final size of zeolite L crystals. The first gel had a starting K/Al ratio of 10, whereas in the second one it was three times lower. The relatively simple chemical composition of the starting gels and the combination of complementary characterization methods allowed us to track down the different stages of transformation of the initial amorphous gels into zeolite crystals and the factors that control the nucleation and growth processes. The role of the starting mixture components in the formation of the primary amorphous particles was explored. It was found that the profoundly different reaction kinetics in the two systems are caused by the difference in diffusion rates, which in turn are controlled by the extent of the polymerization reactions at room temperature during mixing of the starting components prior to hydrothermal treatment. As a consequence, nucleation is fast and ubiquitous in the first system with higher water content and K/Al ratio, whereas it is slow and sporadic in the second system with lower water content and K/Al ratio. Ultimately, these differences in the kinetics lead to the formation of two distinctly different patterns of crystal-size distribution, with a large number of small nanocrystals in the first sample and fewer large crystals in the second sample. The new findings put zeolite crystal growth on a rational basis that would enable the control of zeolite crystal size in similar organic-template-free systems.

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confidence: 62%

Factors That Control Zeolite L Crystal Size

Itani

Bozhilov

Clet

et al. 2011

Chemistry A European J

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“…Several synthetic routes are known for ZnO powder such as sol-gel method [3,4], pyrolysis of chelate complexes [5], spray pyrolysis [6], and thermal decomposition of precursors [7]. Organometallic precursors such as diethyl zinc [8][9][10], dicyclohexyl zinc [11], and dimethylzinc [12] were also used as precursors for nano-sized ZnO. The dialkylzinc precursors are pyrophoric and hence extra precautions need to be taken in handling these precursors.…”

Section: Introductionmentioning

confidence: 99%

3,5-Lutidine coordinated zinc(II) aryl carboxylate complexes: Precursors for zinc(II) oxide

Kumar

Thomas

Nagarajan

et al. 2011

Inorganica Chimica Acta

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“…On the other hand, this kind of internal stress relaxation not only enhanced dielectric property but also induced the grain size growth. 22 bimetallic inserting layer. The grains size in fraction of pure ZnO thin film with 150 nm thick ranged from 22 to 43 nm, with an average size of 32.5 ± 10.5 nm as shown in the Fig.…”

Section: Resultsmentioning

confidence: 99%

Magnetic-control-electric and reversal behavior of ZnO/NiFe/ZnO multilayer films

Chi

Wei

et al. 2017

AIP Advances

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The magnetic-control-electric and corresponding dielectric behavior of the ZnO/NiFe/ZnO multilayer films have been demonstrated by applying an ultrathin bimetallic NiFe inserting layer into ZnO films, and fabricated by radio-frequency magnetron sputtering at room temperature without introducing any oxygen gas during deposition process. At first, a high quality crystalline ZnO(002) textured film was deposited and exhibited a dielectric constant value of around 10 confirmed at room temperature with the Agilent 42941B probe and 4294A impedance meters ranged from 40 Hz to 20 MHz. Once ZnO inserted with a 5 nm-thick NiFe inserting layer, the value of dielectric constant was dramatically increased from 10 to 12.5. This phenomenon can be attributed to redistribute the strongly interface charges between ZnO and NiFe layers and accompany with the relaxation of internal stress of ZnO. On the other hand, the external magnetic field induced dielectric variation can also be clearly observed, and the ZnO film with NiFe inserting layer demonstrates a 0.05%-0.10% dielectric tunability. The magnetic-control-electric and corresponding dielectric behavior of ZnO/NiFe/ZnO multilayers with a single inserting NiFe layer compared with that of pure ZnO film also conclude the magnetoelectric effect in present multilayered structures. Moreover, the grain size of the ZnO films was gradually increased from 32.5 nm to 40.5 nm while inserting with an ultrathin NiFe bimetallic layer. This grain structure transition can be attributed to the lattice misfit between ZnO and NiFe. This research work demonstrates that a single NiFe insering layer can effectively control the dielectric and magnetic characters in the ZnO/NiFe/ZnO multilayered structures and provide valuable multifunctional behaviors for potential novel applications design such as ferroic sensor.

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ZnO Wurtzite Single Crystals Prepared by Nanorod-Assisted Epitaxial Lateral Overgrowth

Cited by 12 publications

References 27 publications

Factors That Control Zeolite L Crystal Size

Factors That Control Zeolite L Crystal Size

3,5-Lutidine coordinated zinc(II) aryl carboxylate complexes: Precursors for zinc(II) oxide

Magnetic-control-electric and reversal behavior of ZnO/NiFe/ZnO multilayer films

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