ZnO nanowire-based nano-floating gate memory with Pt nanocrystals embedded in Al₂O₃gate oxides

Abstract

The memory characteristics of ZnO nanowire-based nano-floating gate memory (NFGM) with Pt nanocrystals acting as the floating gate nodes were investigated in this work. Pt nanocrystals were embedded between Al(2)O(3) tunneling and control oxide layers deposited on ZnO nanowire channels. For a representative ZnO nanowire-based NFGM with embedded Pt nanocrystals, a threshold voltage shift of 3.8 V was observed in its drain current versus gate voltage (I(DS)-V(GS)) measurements for a double sweep of the gate voltage, revealing that the deep effective potential wells built into the nanocrystals provide our NFGM with a large charge storage capacity. Details of the charge storage effect observed in this memory device are discussed in this paper.

High-performance transparent, all-oxide nonvolatile charge trap memory transistor using In-Ga-Zn-O channel and ZnO trap layer

“…Figure 4(a) shows a simple description of the charge trap and detrap processes in the form of a schematic band diagram drawn from previous studies. 18,19 ZnO is an n-type oxide semiconductor that exhibits a band gap structure with very particular electronic characteristics when it is used as a charge-trap layer. 20 This band structure can be the most important factor for improving memory performance.…”

Applications of Nanotechnology in Next-Generation Nonvolatile Memories

“…Various multigate memories have been fabricated in recent years, these include the Double-Gate Fin SONOS, body-tied DG SONOS (omega) type NVM, and various surround gate NVMs [41][42][43][44][45][46][47][48][49][50]. The channel in these type of NVMs are usually narrow Si Fins or Si/poly-Si nanowires, though sometimes ZnO nanowires have also been reported as channel material [41] (Fig.…”

“…The channel in these type of NVMs are usually narrow Si Fins or Si/poly-Si nanowires, though sometimes ZnO nanowires have also been reported as channel material [41] (Fig. 12).…”

“…However, the size of the nanocrystals remains a hindrance in further scaling of these devices. With the introduction of multigate architectures in MOS NVM cells and the advent of tunnel FET memory devices, the reign of MOS memory could be extended by a few more years [41][42][43][44][45][46][47][48][49][50][51][52][53].…”

Aqueous phase approach to ZnO microspindles at low temperature

“…Over the past few years, much attention has been paid to the synthesis of one-dimensional (1D) semiconductor nanomaterials with controlled structures, shapes, and compositions owning to their special properties and potential applications in various fields, such as being used to fabricate nanoscale devices, including sensors [1], field emitters [2,3], light-emitting diodes [4], vacuum gauges [5], nanofloating gate memories [6], solar energy cells [7], piezo-nanogenerators [8] and so on. The observed 1D nanostructures include nanowires [9], nanorods [10,11], nanorings [12], nanochains [13], nanohelix [14], and fishbone-like nanostructures [15], etc.…”