ZnO nanostructures with controlled morphologies on a glass substrate

Jeon, Jong-Myeong; Choi, Jun Hee; Kim, Sun Il; Baik, Chan Wook; Kim, Miyoung; Kim, Jong Min; Yi, Gyu‐Chul

doi:10.1088/0957-4484/21/26/265603

Cited by 15 publications

(13 citation statements)

References 19 publications

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“…where E g is the (Ga,In)N bandgap, e is the electronic charge, R y is the excitonic Rydberg constant, and E e1 and E hh1 are the first quantized eigenvalues of electron and heavy hole energy, respectively. Because E g decreases with increasing x In and both E e1 and E hh1 are proportional to 1/d 2 , eqn (1) shows that the longer wavelength lights could come from larger x In or d while shorter ones from smaller x In or d. Considering the monotonic variation of the MQW thickness (Fig. 4), the long wavelength light emission localized at the sharp facet edges might be ascribed to a localized, sharp increase of x In in the InGaN well.…”

Section: Requirements For El Devicesmentioning

confidence: 99%

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GaN light-emitting diodes on glass substrates with enhanced electroluminescence

et al. 2012

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Section: Requirements For El Devicesmentioning

confidence: 99%

“…Recently, GaN-LEDs on glass substrates have shown great potential for those applications. [1][2][3] Especially, using the concept of local epitaxy (Fig. 1(a)), we demonstrated GaN-LEDs on glass composed of threedimensional (3D) GaN structures of nearly single-crystalline, micron-sized GaN pyramid arrays.…”

Section: Introductionmentioning

confidence: 99%

GaN light-emitting diodes on glass substrates with enhanced electroluminescence

et al. 2012

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“…[ 90 ] We also successfully synthesized ZnO nanorods and ZnO/GaN coreshell nanorod heterostructures (Figure 7 c). [ 91,92 ] The ZnO/ GaN heterointerface was structurally evident (Figure 7 d) although photoluminescence was observed only at low temperatures (Figure 7 e).…”

Section: Progress Reportmentioning

confidence: 99%

Heteroepitaxial Growth of GaN on Unconventional Templates and Layer‐Transfer Techniques for Large‐Area, Flexible/Stretchable Light‐Emitting Diodes

Choi

Kim

Liu

et al. 2015

Advanced Optical Materials

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There have been significant recent developments in the growth of single‐crystal gallium nitride (GaN) on unconventional templates for large‐area blue or green light‐emitting diodes (LEDs) which, together with layer transfer onto foreign substrates, can enable flexible and stretchable lighting applications. Here, the heteroepitaxial growth of GaN on amorphous and single‐crystal substrates employing various interlayers and nucleation layers is reviewed, as well as the use of weak interfaces for layer‐transfer onto foreign substrates. Recent progress in low‐temperature GaN‐based red–green–blue (RGB) LEDs on glass substrates, which has exhibited a calculated efficiency of 11% compared with that from commertial LEDs, is discussed. Layer‐transfer techniques with various interlayers are also discussed. These heteroepitaxial GaN growth and layer‐transfer technologies are expected to lead to new lighting and display devices with high efficiency and full‐color tunability, which are suitable for large‐area, stretchable display and lighting applications.

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“…6 (b)). Based on selective heating method [6][7][8][9][10], we achieved proof-of-concept level polycrystalline GaN (poly-GaN) using sodalime glass substrates at low-temperature ambient (Figs. 7 (a)-(e)).…”

Section: New Attempt To Form High-quality Gan At Low Temperaturesmentioning

confidence: 99%

Prospect of GaN light-emitting diodes grown on glass substrates

Choi¹,

Lee

Baik

et al. 2013

SPIE Proceedings

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We report the enhanced electroluminescence (EL) of GaN light-emitting diodes (LEDs) on glass substrates. We found that GaN morphology affected the EL and achieved enhanced EL of GaN-LEDs on glass by identifying the optimal GaN morphology having both high crystallinity and compatibility for device fabrication. At proper growth temperature, GaN crystallinity was improved with increasing GaN crystal size irrespective of the GaN crystallographic orientation, as determined by spatially resolved cathodoluminescent spectroscopy. The optimized GaN LEDs on glass composed of the nearly single-crystalline GaN pyramid arrays exhibited excellent microscopic EL uniformity and luminance values of ~ 9100 cd/m 2 at the peak wavelength of 495 nm. The EL color could be adjusted mainly by varying the quantum well temperature. In addition, new growth methods for achieving high GaN crystallinity at a low growth temperature (e.g. ~700°C) were briefly reviewed and attempted by adopting selective heating. We expect that performance of the GaN LEDs on glass can be much enhanced by enhancing GaN crystallinity and p-GaN coating, and evolvement of lowtemperature growth of high-quality GaN might even customize ordinary glass as a substrate, which enables highperformance, low-cost lighting or display.

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ZnO nanostructures with controlled morphologies on a glass substrate

Cited by 15 publications

References 19 publications

GaN light-emitting diodes on glass substrates with enhanced electroluminescence

GaN light-emitting diodes on glass substrates with enhanced electroluminescence

Heteroepitaxial Growth of GaN on Unconventional Templates and Layer‐Transfer Techniques for Large‐Area, Flexible/Stretchable Light‐Emitting Diodes

Prospect of GaN light-emitting diodes grown on glass substrates

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