ZnO Nanoneedles∕ZnO:Al Film Stack as an Anti-Reflection Layer for High Efficiency Triple Junction Solar Cell

Wu, Tian-Li; Chuang, Ricky W.; Huang, Chih‐Wei; Cheng, Chiao Yang; Huang, Chun Yen; Lin, Yi Chieh; Su, Yan Kuin

doi:10.1149/2.031206esl

Cited by 10 publications

(4 citation statements)

References 21 publications

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“…Instead of Au nanoparticles, if it is possible to use nanoparticle mask based on similar process chemistries, which can combine plasmonic effect and upconversion effect, the resulting structure may give rise to enhanced optical properties . As ITO layer can function as a conductive top electrode, emitter, or antireflection layer depending on the structure of solar cells , it can be a thin film, nanostructured layer, or a nanostructured layer on top of a thin film layer, which is similar to a report that a ZnO nanostructured layer on top of a thin film layer can enhance the efficiency of GaAs‐based solar cell . If ITO layer can be modified to control absorption or reflection of light as reported for Si and ZnO nanostructures by dry etching process , this may then be employed to design solar cells with novel structures or improve the efficiency of solar cells.…”

Section: Resultsmentioning

confidence: 55%

“…The preparation process for widely used Si, ZnO, and ITO nanostructures depends on the material. Si nanostructures can be obtained through CVD processes in the form of Si nanowires , or wet chemical etching processes employing Au or Ag, or nanosphere lithography‐based dry etching process ; similarly, ZnO nanostructures can be grown through CVD processes or solution process in the format of ZnO nanowires, or nanosphere lithography‐based dry etching process ; comparatively, ITO nanostructures can be prepared through Au catalytic growth , however there are only a few reports on plasma etching process for ITO‐based nanostructures , although there are many studies on plasma etching of ITO films, which can employ same etching chemistry as that used in etching of ZnO . Metal nanoparticles have been used for near‐field optical lithography , and nanosphere lithography is an economical technique to generate periodic vertical arrays, compared to deep ultraviolet lithography, electron beam lithography, or nanoimprinting .…”

Section: Introductionmentioning

confidence: 99%

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Nanoparticle and nanosphere mask for etching of ITO nanostructures and their reflection properties

Deng

Holder

et al. 2014

Phys. Status Solidi A

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Au nanoparticles and polystyrene nanospheres were used as mask for plasma etching of indium tin oxide (ITO) layer. By reactive ion etching (RIE) processes, the morphology of polystyrene nanospheres can be tuned through chemical or physical etching, and Au nanoparticle mask can result in ITO nanostructures with larger aspect ratio than nanosphere mask. During inductively coupled plasma (ICP) processes, Au nanoparticle mask was not affected by the thermal effect of plasma, whereas temperature of the substrate was essential to protect nanospheres from the damaging effect of plasma. Physical bombardment in the plasma can also modify the nanospheres. It was observed that under the same process conditions, the ratio of CH4 and H2 in the process gas can affect the etching rate of ITO without completely etching the nanospheres. The morphology of ITO nanostructures also depends on process conditions. The resulting ITO nanostructures show lower reflection in a spectral range of 400–1000 nm than c‐Si and conventional antireflection layer of SiNx film. ITO nanostructures obtained after etching (scale bar = 200 nm).

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Section: Resultsmentioning

confidence: 55%

Section: Introductionmentioning

confidence: 99%

Nanoparticle and nanosphere mask for etching of ITO nanostructures and their reflection properties

Deng

Holder

et al. 2014

Phys. Status Solidi A

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“…where ∆E g , A and n are band gap narrowing, empirical constant (2.8 × 10 −6 meV cm −3 ) and carrier density, respectively [15]. In the visible-infrared region, the reflectance spectra show different behavior as also observed in previous work in Ga or Al doped ZnO, suggesting the refractive index changing due to annealing [16,17].…”

Section: Resultsmentioning

confidence: 55%

Optical study of a two-level defect complex in gallium doped ZnO

Hou

Tang

Liang

et al. 2019

J. Phys. D: Appl. Phys.

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By means of all optical characterizations, carrier dynamics of Ga Zn -V Zn defect complex in Ga doped ZnO film has been systematically studied. It is observed that the defect complex exhibits a red emission centered at 650 nm, different from that of a reference sample containing V O only. From our observations using time-resolved photoluminescence and multiple-wavelength excitation photoluminescence measurements, the energy level of Ga Zn -V Zn is determined to be a two-level system, which is fundamentally different from the reference sample with only a deep level in term of carrier dynamics. This work reveals that Ga Zn -V Zn distinguished from the widely observed V O is a potential candidate for new single photon emitters.

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“…ZnO nanostructures have also been widely applied to Si solar cell for generating the anti-reflection effects. [26][27][28][29] Because of the low growth temperature, low growth selectivity, and high growth speed along its c-axis, ZnO nanowires have been widely used for this application. However, with a Si nanostructure on a Si solar cell, it is difficult to effectively collect the photocurrent generated in the Si nanostructure, which can strongly absorb sunlight.…”

mentioning

confidence: 99%

Highly-Conductive, Transparent Ga-Doped ZnO Nanoneedles for Improving the Efficiencies of GaN Light-Emitting Diode and Si Solar Cell

Yao

Lin

et al. 2019

ECS J. Solid State Sci. Technol.

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The growths of transparent, highly-conductive Ga-doped ZnO (GaZnO) nanoneedles (NNs) on the tops of GaN-based light-emitting diodes (LEDs) and Si solar cells for enhancing light extraction and reducing surface reflection, respectively, and hence increasing their efficiencies are demonstrated. The GaZnO NNs are grown based on the vapor-liquid-solid process by using surface Ag nanoparticles (NPs) as growth catalyst. In the application to LED, the residual Ag NPs can induce the surface plasmon (SP) coupling effect for increasing the LED emission efficiency. By combining the SP coupling effect, the light extraction effects of the GaZnO NNs and simultaneously deposited GaZnO thin film, and the current spreading effect of the thin film, the LED output intensity can be increased by 100%. In the solar cell application, the SP resonance of the residual Ag NPs can also enhance sunlight harvest and hence the energy conversion efficiency. By combining the effects of the residual Ag NPs, the GaZnO thin film, and the GaZnO NNs, the energy conversion efficiency of a Si solar cell can increase from 9.65 to 12.30%, corresponding to a relative enhancement of 27.5%.

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ZnO Nanoneedles∕ZnO:Al Film Stack as an Anti-Reflection Layer for High Efficiency Triple Junction Solar Cell

Cited by 10 publications

References 21 publications

Nanoparticle and nanosphere mask for etching of ITO nanostructures and their reflection properties

Nanoparticle and nanosphere mask for etching of ITO nanostructures and their reflection properties

Optical study of a two-level defect complex in gallium doped ZnO

Highly-Conductive, Transparent Ga-Doped ZnO Nanoneedles for Improving the Efficiencies of GaN Light-Emitting Diode and Si Solar Cell

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