ZnO growth by chemical vapour transport

Ntep, J; Hassani, Saïd; Lusson, A.; Tromson‐Carli, A.; Ballutaud, D.; Didier, G.; Triboulet, R.

doi:10.1016/s0022-0248(99)00363-2

Cited by 103 publications

(72 citation statements)

References 10 publications

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“…It has been well established that the growth of ZnO by vapour transport in closed ampoules at moderate temperatures (∼1000°C) and temperature gradients results in very low growth rates in absence of other species [11,12]. We refer them as "additional species" and we can find a good variety in literature: F 2 [13], Cl 2 [5,6,13,14], Br 2 [13,14], I 2 [13], HF [13], HCl [5,[13][14][15], HBr [14,15], HI [15], NH 3 [5], NH 4 Cl [14,15], NH 4 Br [14,15], ZnCl 2 [15,16], HgCl 2 [5,17,19], Zn [16,18], H 2 [5,20,21], C [6,21,23] and different mixtures: H 2 O+H 2 [2,20], H 2 +C+H 2 O [24] and N 2 +C+H 2 O [24].…”

Section: Introductionmentioning

confidence: 99%

“…In addition, ZnO bulk crystals can be used as substrates for epitaxial growth of other wide bandgap materials as, for example, GaN which presents a wurtzite structure with a small lattice mismatch as regards ZnO. As regards the growth of ZnO bulk crystals, it has been carried out by different "classical" methods, as flux [4], vapour transport [5,6], hydrothermal [7,8] and solution [9,10], being hydrothermal and vapour transport the most frequently used ones. It has been well established that the growth of ZnO by vapour transport in closed ampoules at moderate temperatures (∼1000°C) and temperature gradients results in very low growth rates in absence of other species [11,12].…”

Section: Introductionmentioning

confidence: 99%

“…In addition, this reaction can produce uncontrolled nucleation points during the process disturbing the growth of high quality single crystals. One way to avoid this reaction is the deposition of a graphite layer on the inner ampoule walls [6]. Nevertheless, the ZnO crystals obtained in graphitised ampoules www.crt-journal.org generally present an orange colour and a post-growth annealing in an O 2 atmosphere has been needed to obtain colourless crystals [22][23][24].…”

Section: Introductionmentioning

confidence: 99%

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Growth of ZnO crystals by vapour transport: Some ways to act on physical properties

Tena‐Zaera

Martı́nez-Tomás

Gómez‐García

et al. 2006

Cryst. Res. Technol.

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Nowadays, the growth of ZnO by vapor transport in silica ampoules is generally made in presence of graphite. As it has been already shown, this means that the growth process is carried out in presence of a Zn excess. In order to control that and act, as a consequence, on the physical properties of crystals we have performed a systematic study of the growth process in a wide range of Zn excess compositions using well defined experimental conditions. As a preliminary characterization, optical absorption and electrical properties have been analyzed at room temperature. The results show how some physical properties of asgrown ZnO crystals can be changed in a controlled way by an adequate combination of different growth conditions such as graphite covering of inner ampoule walls, thermal difference between source material and crystallization zone and additional gas (composition and pressure). In this frame some post-growth annealing processes can be avoided reducing the time and cost of processes.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Growth of ZnO crystals by vapour transport: Some ways to act on physical properties

Tena‐Zaera

Martı́nez-Tomás

Gómez‐García

et al. 2006

Cryst. Res. Technol.

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“…So far, many works have been carried out to grow ZnO crystals by the hydrothermal method [7], the flux method [8], the vertical Bridgman method [9] and the chemical vapor transport (CVT) method [10]. Although ZnO crystal up to 2-inch in diameter has been obtained by the hydrothermal method [7], it is valuable to explore a simple and cheap technique for ZnO crystal growth.…”

Section: Introductionmentioning

confidence: 99%

Flux Bridgman growth and the influence of annealing temperatures on PL properties of ZnO single crystals

Shen

et al. 2011

Cryst. Res. Technol.

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Transparent ZnO crystals were obtained by the flux Bridgman method from high temperature solution of 22 mol% ZnO-78 mol% PbF 2 system. The influence of annealing temperatures on the photoluminescence (PL) of ZnO crystal was investigated. An ultraviolet emission peak at about 379 nm was observed in PL spectra and the peak position has a weak blueshift for annealed samples. A green band centered at 523 nm appeared in the annealed samples and its intensity enhanced with the increase of annealing temperatures, while the intensity of the ultraviolet peak decreased considerably. However, the ultraviolet emission peak became the strongest after annealing at 1000 °C. This phenomenon was considered to be associated with oxygen vacancy and F -impurities induced by the PbF 2 flux. The results show that high temperature annealing in air seems helpful for improving the PL properties of ZnO crystal.

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“…Unlike many other wide bandgap compound semiconductors, ZnO and its constituents are abundant in the earth's crust; additionally, large diameter single crystal growth is possible. [3][4][5] As grown ZnO is n-type, often highly, due to extrinsic defects such as aluminum or gallium incorporated during growth. 6 Current applications of ZnO in optoelectronic devices are generally limited to transparent conducting oxide (TCO) capping layers.…”

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confidence: 99%

Potassium acceptor doping of ZnO crystals

et al. 2015

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ZnO bulk single crystals were doped with potassium by diffusion at 950°C. Positron annihilation spectroscopy confirms the filling of zinc vacancies and a different trapping center for positrons. Secondary ion mass spectroscopy measurements show the diffusion of potassium up to 10 μm with concentration ∼1 × 1016 cm−3. IR measurements show a local vibrational mode (LVM) at 3226 cm−1, at a temperature of 9 K, in a potassium doped sample that was subsequently hydrogenated. The LVM is attributed to an O–H bond-stretching mode adjacent to a potassium acceptor. When deuterium substitutes for hydrogen, a peak is observed at 2378 cm−1. The O-H peak is much broader than the O-D peak, perhaps due to an unusually low vibrational lifetime. The isotopic frequency ratio is similar to values found in other hydrogen complexes. Potassium doping increases the resistivity up to 3 orders of magnitude at room temperature. The doped sample has a donor level at 0.30 eV.

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ZnO growth by chemical vapour transport

Cited by 103 publications

References 10 publications

Growth of ZnO crystals by vapour transport: Some ways to act on physical properties

Growth of ZnO crystals by vapour transport: Some ways to act on physical properties

Flux Bridgman growth and the influence of annealing temperatures on PL properties of ZnO single crystals

Potassium acceptor doping of ZnO crystals

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