ZnO–GaN tunnel junction for transparent ohmic contacts to p-GaN

Properties of isotype n-ZnO/n-GaN heterostructures studied by I–V–T and electron beam induced current methods

“…A study of the properties of isotype n-ZnO/n-(Al)GaN type heterostructures is also important because, in particular, isotype heterostructures (depending on their band alignment) can also have strong diode-like rectifying behavior comparable to that of anisotype p-n heterojunctions. In addition, highly doped ZnO layers with electron concentration higher than 10 19 cm −3 were used as transparent ohmic contacts to GaN in many reports, for example [11][12][13]. An n-ZnO/n-GaN being a part of the p-GaN/n-ZnO/n-GaN double heterostructure may be of interest for high efficiency optoelectronics devices.…”

A comparative study of ZnO film and nanorods for ZnO/polyfluorene inorganic/organic hybrid junction

“…However, the highly efficient and reliable p-type ZnO is still difficult to be achieved, which has significantly limited the development of ZnO homojunction devices [2]. To harvest the advantages of this semiconductor material, other ptype materials have been combined with n-ZnO to fabricate heterojunction LEDs, such as p-GaN, p-Si, diamond, p-SiC, p-CuAlO2, p-CuO, p-AlGaN, P-GaAs, p-SrCu2O2, La (0.65) Sr (0.35) MnO (3) , PED-OT.PSS, alpha-NPD, P 3 HT, polyaniline, and other organic polymers [3][4][5][6][7][8][9][10][11][12][13][14]. Among the numerous ZnO based hybrid structures, the ZnO based inorganic/organic hybrid junction devices present great potential for low-cost large area optoelectronic applications, which will benefit from the high carrier mobility of inorganic materials and the high luminescence efficiency of organic polymers [12].…”

Tilted Epitaxial ZnO Nanospears on Si(001) by Chemical Bath Deposition

“…Creation of homojunctions with p-type and n-type ZnO is difficult, however, because native donors in ZnO are known to compensate for holes . Heterojunctions are a viable alternative, which can be fabricated using ZnO and another semiconducting material with a different bandgap (either n-type or p-type), such as Cu 2 O, − GaN, ,,, Si, ,,,− , or SiC. ,, …”

“…Creation of homojunctions with p-type and n-type ZnO is difficult, however, because native donors in ZnO are known to compensate for holes. 2 Heterojunctions are a viable alternative, which can be fabricated using ZnO and another semiconducting material with a different bandgap (either n-type or p-type), such as Cu 2 O, [16][17][18][19] GaN, 3,7,24,25 Si, 4,5,8,[20][21][22][23]26 or SiC. 9,27,28 Although the epitaxial deposition of ZnO has been reported on many single crystal substrates, such as Au, 29,30 GaN, 31 InP, [32][33][34] MgAl 2 O 4 , 35 and sapphire, 10 the deposition on Si typically requires buffer layers.…”