ZnO film for application in surface acoustic wave device

Abstract

High quality, c-axis oriented zinc oxide (ZnO) thin films were grown on silicon substrate using RF magnetron sputtering. Surface acoustic wave (SAW) devices were fabricated with different thickness of ZnO ranging from 1.2 to 5.5 µm and the frequency responses were characterized using a network analyzer. Thick ZnO films produce the strongest transmission and reflection signals from the SAW devices. The SAW propagation velocity is also strongly dependent on ZnO film thickness. The performance of the ZnO SAW devices could be improved with addition of a SiO 2 layer, in name of reflection signal amplitude and phase velocity of Rayleigh wave.

Controlled fabrication of oriented co-doped ZnO clustered nanoassemblies

“…[1][2][3][4][5][6]. Of late, it has also been reported as a ferromagnetic material with a Curie point above room temperature either due to the presence of defects or with doping of Mn, Co or Ni [7][8][9][10][11].…”

Meyer-Neldel rule in ac conductivity of Cu doped ZnO thin films

“…As an alternative to widely used indium tin oxide (ITO) film, zinc oxide (ZnO) films have attracted considerable interest as a transparent conducting electrode [1]. Because of its direct band gap of 3.37 eV [2] and large exciton binding energy of 6 meV [3], ZnO thin film has a great potential in various area including gas sensor [4], light emitting diodes and UV lasers [5] and surface acoustic wave devices [6]. Many recent investigations have indicated that the electrical properties of the ZnO films may be modified by doping with Al, In and Ga [7][8][9][10].…”

Influence of doping behavior of Al on nanostructure, morphology and optoelectronic properties of Al Doped ZnO thin film grown on FTO substrate

“…ZnO-based structures have been applied in a variety of fields such as light emitting diodes, photo diodes [4], solar cells [5,6], gas sensor [7], surface acoustic wave devices [8], field effect transistor [9] and piezoelectric devices [10].…”