ZnO-doped PFPAMA: a novel transparent conducting polymer for fast photodiodes

Abstract

In this article, a new Schottky diode based on a transparent conducting polymer 2-(4-fluorophenyl)-2-oxoethyl-2-methylprop-2-enoate (PFPAMA) that is doped up to 5% with ZnO is presented. PFPAMA is a promising transparent polymer that is inclined towards n-type behavior with the potential to be used as an electron transport layer. Each device had the Al/p-Si:(PFPAMA:ZnO)/Al structure. The diode ideality factor was found to depend on bias and illumination but the calculated interface state density is lower than for most reported Al/p-Si diodes, suggesting that the presence of the polymer suppresses interface states. The measured electrical and photo response characteristics confirm that the resulting diodes are suitable for fast photodiodes over the intensity range of dark to 100 mW/cm2 whose performance is optimizable by ZnO doping.

Two‐step novel aromatic polyimide synthesis and characterization: Survey of energy calculations and diode applications

“…It is clear that the n value is greater than 1, which can be attributed to inhomogeneities, R s , and interface states and some experiments have been investigated by many researchers 40–42 . These parameters are used to calculate the following equation with the thermionic emission theory 43,44 ; details 45 …”