ZnO, Cu-doped ZnO, Al-doped ZnO and Cu-Al doped ZnO thin films: Advanced micro-morphology, crystalline structures and optical properties

Dejam, Laya; Kulesza, Sławomir; Sabbaghzadeh, J.; Ghaderi, Atefeh; Solaymani, Shahram; Ţălu, Ştefan; Bramowicz, Mirosław; Amouamouha, Mitra; Shayegan, Amir Hossein Salehi; Sari, A. H.

doi:10.1016/j.rinp.2023.106209

Cited by 39 publications

(18 citation statements)

References 32 publications

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“…The blue emission centered at 2.85 eV(435 nm) is caused by the transition of electrons from the conduction band to the Cu + acceptor level while the peak centered at 2.61 eV(475 nm) occurred due to the transition of electrons from the Cu 2+ donor level to the Cu + acceptor level . The green emission centered at 2.33 eV for the UZO sample is caused by oxygen vacancy defects. , Since in the CZO sample, no peak related to green emission has been found, we can thus say that doping of copper does not produce oxygen vacancy in CZO thin films; perhaps Cu substituted Zn in host ZnO, which is also confirmed by XRD and XPS results. A similar result was also reported by Singh et al and Sreedhar et al The color coordinates of PL on the CIE 1931 X–Y chromaticity diagram are shown in Figure d.…”

Section: Resultsmentioning

confidence: 83%

“…A similar trend of results has been reported in previous research. , The peak centered at 376 nm is related to the near-band edge (NBE) free exciton transition . The peak centered at nearly 410 nm, known as the DLE (deep-level-emission) peak, is due to various defects including the substitution of the Zn 2+ ion and vacancies of oxygen and Zn interstitial . For a more detailed investigation of these peaks, we deconvoluted RT-PL spectra of all samples, as shown in Figure b,c.…”

Section: Resultsmentioning

confidence: 99%

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Enhanced Visible-Light Photodetection with Undoped and Doped ZnO Thin-Film Self-Powered Photodetectors

Singh,

Ambedkar,

Tyagi

et al. 2023

ACS Omega

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Photodetection plays an essential role in the visiblelight zone and is important in modern science and technology owing to its potential applications in various fields. Fabrication of a stable photodetector remains a challenge for researchers. We demonstrated a high-response/recovery and self-powered undoped ZnO (UZO) and Cu-doped ZnO (CZO) thin film-based visible-light photodetector fabricated on a cost-effective Si substrate using reactive cosputtering. The structural, morphological, and optical properties of CZO and UZO thin films have been examined using X-ray diffraction, field emission scanning electron microscopy, X-ray photoelectron spectroscopy, atomic force microscopy, and photoluminescence spectroscopy. The results of the CZO/n-Si photodetector compared with those of the undoped ZnO (UZO)/n-Si photodetector show that the CZO/n-Si exhibits a higher on/off ratio, responsivity, and detectivity than UZO/n-Si. Also, the CZO/ n-Si photodetector shows high stability and reproducibility over 20 cycles after 180 days. A relative study of CZO/n-Si-and UZO/n-Si-based photodetectors reveals the enhanced performance of the CZO/n-Si photodetector, which has a high on/off ratio of ∼300 with a high specific detectivity of 2.8 × 10 10 Jones for 75 mW visible light. The prepared self-powered CZO/n-Si/Ag thin film-based visible-light photodetector paves the way for the development of high-performance photodetector designs.

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Section: Resultsmentioning

confidence: 83%

Section: Resultsmentioning

confidence: 99%

Enhanced Visible-Light Photodetection with Undoped and Doped ZnO Thin-Film Self-Powered Photodetectors

Singh,

Ambedkar,

Tyagi

et al. 2023

ACS Omega

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“…Eqn (13) shows that adsorption of oxygen on ZnO surface effectively traps electrons. Since the material is N type, this process, reduces the Fermi level and causes a band bending to extend the width of the electron depletion region (Fig.…”

Section: Xrd and Tem Characterizationmentioning

confidence: 99%

Chemical VOC sensing mechanism of sol–gel ZnO pellets and linear discriminant analysis for instantaneous selectivity

et al. 2023

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“…And the modification of polymers by DEZ usually shows relatively low reactivity, during the multiple precursors VPI process, the presence of Al 2 O 3 can provide more reaction sites for DEZ adsorption [52]. Specifically, as an impurity atom, the Al atoms enter the Zn sites with oxidation structure, the free electrons and holes released by Al atoms can increase the carrier concentration in the system [53]. And then the mixed infiltration of Al 2 O 3 and ZnO can improve the reactivity between the precursors and the polymer matrix material and improve their electrical properties.…”

Section: Introductionmentioning

confidence: 99%

Efficiently tuning the electrical performance of PBTTT-C14 thin film via in situ controllable multiple precursors (Al₂O₃:ZnO) vapor phase infiltration

Jia,

Wang,

et al. 2024

Nanotechnology

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Conjugated polymer-based organic/inorganic hybrid materials become the current research frontier and show great potential to integrate flexible polymers and rigid solid materials, which have been widely used in the field of various flexible electronics and optical devices. In this study, based on the multiple vapor phase infiltration (VPI) process, various precursor molecules (diethylzinc DEZ, trimethylaluminum TMA, H2O) are applied for the in situ modification of PBTTT-C14 films. The conductivity of the PBTTT-C14/Al2O3:ZnO (AZO) film is significantly enhanced, and the maximum value of conductivity is 1.16 S cm-1, which is eight orders of magnitude higher than the undoped PBTTT-C14 thin film. Here, the change of morphologies and crystalline states are analyzed via SEM, AFM, and XRD. And the chemical changes during the VPI process of PBTTT-C14 are characterized through Raman, XPS, and UV-vis. During the AZO VPI process, the formation of new ZnS matrix in the polymer subsurface can generate new additional electron conduction pathways through the crosslinking of polymer chains with inorganic materials, and the addition of Al2O3 can bring about the increase of average grain size of ZnO crystals, which is also benefit to the conductivity increase of PBTTT-C14 thin film. Generally, the synergistic effect between the inorganic and polymer constituents results in the significantly enhancement of the conductivity of PBTTT-C14/AZO thin films.

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ZnO, Cu-doped ZnO, Al-doped ZnO and Cu-Al doped ZnO thin films: Advanced micro-morphology, crystalline structures and optical properties

Cited by 39 publications

References 32 publications

Enhanced Visible-Light Photodetection with Undoped and Doped ZnO Thin-Film Self-Powered Photodetectors

Enhanced Visible-Light Photodetection with Undoped and Doped ZnO Thin-Film Self-Powered Photodetectors

Chemical VOC sensing mechanism of sol–gel ZnO pellets and linear discriminant analysis for instantaneous selectivity

Efficiently tuning the electrical performance of PBTTT-C14 thin film via in situ controllable multiple precursors (Al₂O₃:ZnO) vapor phase infiltration

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ZnO, Cu-doped ZnO, Al-doped ZnO and Cu-Al doped ZnO thin films: Advanced micro-morphology, crystalline structures and optical properties

Cited by 39 publications

References 32 publications

Enhanced Visible-Light Photodetection with Undoped and Doped ZnO Thin-Film Self-Powered Photodetectors

Enhanced Visible-Light Photodetection with Undoped and Doped ZnO Thin-Film Self-Powered Photodetectors

Chemical VOC sensing mechanism of sol–gel ZnO pellets and linear discriminant analysis for instantaneous selectivity

Efficiently tuning the electrical performance of PBTTT-C14 thin film via in situ controllable multiple precursors (Al2O3:ZnO) vapor phase infiltration

Contact Info

Product

Resources

About

Efficiently tuning the electrical performance of PBTTT-C14 thin film via in situ controllable multiple precursors (Al₂O₃:ZnO) vapor phase infiltration