ZnO-Based Ultraviolet Photodetectors

Liu, Kewei; Sakurai, Minoru; Aono, Masakazu

doi:10.3390/s100908604

Cited by 617 publications

(361 citation statements)

References 111 publications

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“…However, the responsivity of the single nanodisk was 3300 A/W. The responsivity value obtained for the single nanodisk was among the highest values compared with the other published values for the ZnO nanostructures [75].…”

Section: Uv Sensors Based On 2d Zno Structuresmentioning

confidence: 55%

Ultraviolet Sensors Based on Two-Dimensional Zinc Oxide Structures

Al-Hardan¹,

Hamid²,

RoslindaShamsudin³

et al. 2017

Optoelectronics - Advanced Device Structures

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In this chapter, we review the application of zinc oxide (ZnO) in ultraviolet (UV) sensing and emphasise on the two-dimensional (2D) ZnO structures. The synthesis of 2D ZnO structures, the morphologies, and the photoluminescence emission will be reviewed and highlighted. The performance of the UV sensors based on 2D ZnO structures is explored. The lack in the study of the 2D ZnO UV sensors might be due to the difficulties of controlling the growth of the 2D ZnO compared to the one-dimensional (1D) ZnO structures.

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Section: Uv Sensors Based On 2d Zno Structuresmentioning

confidence: 55%

Ultraviolet Sensors Based on Two-Dimensional Zinc Oxide Structures

Al-Hardan¹,

Hamid²,

RoslindaShamsudin³

et al. 2017

Optoelectronics - Advanced Device Structures

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“…Zinc oxide (ZnO) is emerging as a potential candidate in optoelectronic applications like light‐emitting diodes, laser diodes, and photodetectors,11 it has high photosensitivity for UV light due to its wide bandgap (3.4 eV) 12. Some works have been done to broaden the response of ZnO from UV to wider range 13, 14, 15, 16, 17, 18, 19, 20.…”

Section: Introductionmentioning

confidence: 99%

An Enhanced UV–Vis–NIR an d Flexible Photodetector Based on Electrospun ZnO Nanowire Array/PbS Quantum Dots Film Heterostructure

et al. 2016

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ZnO nanostructure‐based photodetectors have a wide applications in many aspects, however, the response range of which are mainly restricted in the UV region dictated by its bandgap. Herein, UV–vis–NIR sensitive ZnO photodetectors consisting of ZnO nanowires (NW) array/PbS quantum dots (QDs) heterostructures are fabricated through modified electrospining method and an exchanging process. Besides wider response region compared to pure ZnO NWs based photodetectors, the heterostructures based photodetectors have faster response and recovery speed in UV range. Moreover, such photodetectors demonstrate good flexibility as well, which maintain almost constant performances under extreme (up to 180°) and repeat (up to 200 cycles) bending conditions in UV–vis–NIR range. Finally, this strategy is further verified on other kinds of 1D nanowires and 0D QDs, and similar enhancement on the performance of corresponding photodetecetors can be acquired, evidencing the universality of this strategy.

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“…[1][2][3][4] Contrary to Si-based devices, which are widely used for these applications, ZnO-based detectors have the advantage to be insensitive to the visible light allowing for visible-blind detection without any additional filters. 5 The interest in using ZnO nanowires for UV detection has emerged in the early years 2000 with the demonstration of highly sensitive photodetectors based on individual nanowires. 6 One particular advantage of ZnO nanowires is that it is a low-cost material that can be solution-synthesized on a vast variety of substrates.…”

Section: Introductionmentioning

confidence: 99%

Characterization and modeling of a ZnO nanowire ultraviolet photodetector with graphene transparent contact

Zhang

Babichev

Jacopin

et al. 2013

Journal of Applied Physics

112

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We report the demonstration of a ZnO nanowire ultraviolet photodetector with a top transparent electrode made of a few-layered graphene sheet. The nanowires have been synthesized using a lowcost electrodeposition method. The detector is shown to be visible-blind and to present a responsivity larger than 10 4 A/W in the near ultraviolet range thanks to a high photoconductive gain in ZnO nanowires. The device exhibits a peak responsivity at 370 nm wavelength and shows a sub bandgap response down to 415 nm explained by an Urbach tail with a characteristic energy of 83 meV. The temporal response of the detector and the power dependence are discussed. A model of the photoconductive mechanism is proposed showing that the main process responsible for the photoconductive gain is the modulation of the conducting surface due to the variation of the surface depletion layer and not the reduction of recombination efficiency stemming from the electron-hole spatial separation. The gain is predicted to decrease at high incident power due to the flattening of the lateral band bending in agreement with experimental data. V C 2013 AIP Publishing LLC.

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ZnO-Based Ultraviolet Photodetectors

Cited by 617 publications

References 111 publications

Ultraviolet Sensors Based on Two-Dimensional Zinc Oxide Structures

Ultraviolet Sensors Based on Two-Dimensional Zinc Oxide Structures

An Enhanced UV–Vis–NIR an d Flexible Photodetector Based on Electrospun ZnO Nanowire Array/PbS Quantum Dots Film Heterostructure

Characterization and modeling of a ZnO nanowire ultraviolet photodetector with graphene transparent contact

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