ZnO and related materials: Plasma-Assisted molecular beam epitaxial growth, characterization and application

Hong, Soon–Ku; Chen, Y.; Ko, Hang-Ju; Wenisch, H.; Hanada, T.; Yao, Takafumi

doi:10.1007/bf02665850

Cited by 32 publications

(10 citation statements)

References 42 publications

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“…The crystallographic sides (O-face versus Zn-face) do not differ in terms of rocking curev full width at half maximum, but on the Zn-face in general a 3D growth mode resulted in agreement with Ref. [11]. However, with respect to acceptor doping by group-V elements (N, P, As) the O-polarity should be preferred.…”

Section: Resultssupporting

confidence: 80%

Homoepitaxy of ZnO: from the substrates to doping

Neumann

Lautenschläger

Graubner

et al. 2007

Physica Status Solidi (b)

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We report on the homoepitaxial growth of ZnO thin films by chemical vapor deposition techniques. The preparation of the ZnO substrates after mechanical polishing employed a high temperature annealing step which produced atomically flat surfaces and removed all of the surface and subsurface damage. Two dimensional epitaxial growth was achieved without an additional buffer layer. The substrate had a rocking curve with a full width at half maximum of 27″ which can be compared with that of the film of 17″. The films had superior band edge luminescence as compared with the substrate for which the green luminescence band is dominating. The impurity content in the substrates especially Li is reduced by the high temperature annealing step and drops further close to the detection limit in the films. The low substrate temperatures around 660 °C allow for the incorporation of nitrogen on oxygen site as a shallow acceptor.

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Section: Resultssupporting

confidence: 80%

Homoepitaxy of ZnO: from the substrates to doping

Neumann

Lautenschläger

Graubner

et al. 2007

Physica Status Solidi (b)

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“…The difference in the polarities between these two faces affects the growth mode, impurity incorporation and dislocation generation. ZnO on unipolar substrates such as ZnO bulk and GaN template can be grown having either polarity [4]. The growth mode and optimized growth conditions for Zn-polar ZnO differ widely from those for O-polar ZnO, and the residual carrier concentration in Zn-polar ZnO is 10 16 cm -3 , one order magnitude lower than that in O-polar ZnO [5,6].…”

Section: Introductionmentioning

confidence: 99%

MBE growth of Zn‐polar ZnO on MOCVD‐ZnO templates

Kato

Sano

Miyamoto

et al. 2004

Physica Status Solidi (b)

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High-quality Zn-polar ZnO films were grown on metal-organic chemical-vapor deposition (MOCVD) grown ZnO/a-sapphire templates by plasma-assisted molecular beam epitaxy (MBE). Annealing of the MOCVD-ZnO layer in an O 2 atmosphere improved the surface roughness and crystallinity of the template. Reflection high-energy electron diffraction and atomic force microscopy observations revealed that MBE-ZnO maintained its Zn-polarity, which is the polarity of the underlying MOCVD-ZnO, and that the optimized growth condition is the O-rich flux regime. Structural and optical properties of the MBE-ZnO films were significantly improved by growth under O-rich flux condition and introducing a lowtemperature ZnO buffer. The line widths of (0002) and (10 10) X-ray ω-rocking curves for MBE-ZnO films were 533 and 582 arcsec, respectively. The ground and excited (n = 2) states of A-exciton were clearly evident at 3.377 and 3.423 eV in low-temperature (4.2 K) photoluminescence of the Zn-polar ZnO film.

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“…Most of the previous works were focused on the fabrication of Mg x Zn 1Àx O alloy thin films [7][8][9] and of ZnO/Mg x Zn 1Àx O heterostructure [10][11][12] which is essential for band gap engineering as well as device application. In particular, the confirmation of quantum well structure and the luminescence of exciton in low-dimensional structure in which the ultraviolet lasing based on them with low threshold of 11 kW/ cm 2 was obtained, were studied in detail [13,14].…”

Section: Introductionmentioning

confidence: 99%