2006
DOI: 10.1016/j.tsf.2005.08.177
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ZnO:Al films deposited by in-line reactive AC magnetron sputtering for a-Si:H thin film solar cells

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Cited by 86 publications
(34 citation statements)
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“…The latter is crucial for indirect band gap absorbers in thin film cells (e.g. a-Si solar cells), to enhance the optical path length in the absorber and thus overall efficiency [9,10]. On an industrial basis it is produced mostly by magnetron sputtering, which is a relatively expensive vacuum technique [5,6].…”
Section: Introductionmentioning
confidence: 99%
“…The latter is crucial for indirect band gap absorbers in thin film cells (e.g. a-Si solar cells), to enhance the optical path length in the absorber and thus overall efficiency [9,10]. On an industrial basis it is produced mostly by magnetron sputtering, which is a relatively expensive vacuum technique [5,6].…”
Section: Introductionmentioning
confidence: 99%
“…2,3 Employing different absorber materials in multi-junction solar cells, such as amorphous silicon alloys and microcrystalline silicon, efficient light trapping is required at long wavelengths ͑up to 1100 nm͒. To meet this demand, TCO substrates with different surface textures have recently been developed and tested in solar cells, such as optimized wet-etched 4 or surface plasma-treated 5 zinc-oxide, double-textured tin-oxide, 6 and a combination of etched glass with zinc-oxide. 7 Even though the potential of using of high performance TCOs has been already investigated, 8 a physical explanation of why these textures result in high scattering properties is still missing.…”
mentioning
confidence: 99%
“…For HMGZO thin films, the main mechanism of absorption in the NIR region is free-carrier absorption, induced by vibrations in the free-carrier ensemble, which resonate with the alternating electric field of the radiation in the NIR [28,29]. According to Drude's theory [30],…”
Section: Optical Transmittances and Band Gap Of Hmgzo Thin Filmsmentioning
confidence: 99%