ZnIn2S4 as a window in heterojunction solar cells

Vigil, O.; Calzadilla, O.; Seuret, D.; Vidal, Julien; Leccabue, F.

doi:10.1016/0165-1633(84)90056-x

Cited by 30 publications

(10 citation statements)

References 10 publications

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“…1 and Table I. The same ternary compound, synthesized earlier by chemical transport methods, crystallized under the hexagonal variety (a = 3.88Å and c = 37.02Å) [3,4]. The present work has for merit the fact of giving, for the first time, the possibility of synthesis of this ternary ZnIn 2 S 4 from the spray pyrolysis method.…”

Section: Characterization Techniquesmentioning

confidence: 93%

Structural and Optoelectronic Properties of In-Zn-S sprayed Layers

et al. 2008

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In this work, In-Zn-S thin layers were prepared using the spray pyrolysis technique on glass substrates at 320• C. ] one was taken constant equal to 2. The atomic composition was carried out with the atomic absorption. The structural study of all layers via X-ray diffraction and atomic force microscopy shows that the layer, obtained using x = 0 is formed by binary material In2S3 with a principal orientation along (400). When the composition increases the same study depicts the presence of other materials such as ZnO, ZnS, and ZnIn2S4. On the contrary, for x = 0.4, the film is mainly formed by the ternary compound ZnIn2S4 which crystallizes in cubic phase. Moreover, the optical analysis via the transmittance, reflectance as well as the photocurrent reveals that the band gap energy Eg increases slightly as a function of the x composition (Eg varies from 2.6 to 2.9 eV).

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Section: Characterization Techniquesmentioning

confidence: 93%

Structural and Optoelectronic Properties of In-Zn-S sprayed Layers

et al. 2008

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“…Asenjo et al [21] developed 7.9%-efficient CuInS 2 solar cells with ZnS-In 2 S 3 as the buffer layer using chemical bath deposition. Vigil et al [22] prepared n-type ZnIn 2 S 4 single crystal using the vapor-phase chemical transport method. Yu et al [23] fabricated visible-light-responsive ZnIn 2 S 4 film electrodes on Ti substrates using the electrodeposition method.…”

Section: Introductionmentioning

confidence: 99%

Preparation of Zn–In–S film electrodes using chemical bath deposition for photoelectrochemical applications

Cheng

Liang

2010

Solar Energy Materials and Solar Cells

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“…The A II -B 2 III -C 4 VI materials are attractive materials because of their applicability for solar cells, light emitting diodes, and photoconductive devices [1][2][3]. Magnesium gallium selenide (MgGa 2 Se 4 ) is a new material satisfying such a requirement.…”

Section: Introductionmentioning

confidence: 99%