ZnGeP2 growth: melt non-stoichiometry and defect substructure

Growth and annealing characterization of ZnGeP2 crystal

“…The result illuminates that the content of P is increased and higher than that of as-grown ZGP. We also suspect that little Zn reacts with excessive P substance to form binary compounds (ZnP 2 and Zn 3 P 2 [22]). Therefore, the content of Zn can be reduced and the relative one of Ge in annealed ZGP can be increased.…”

Growth and thermal annealing effect on infrared transmittance of ZnGeP2 single crystal

“…The main method to prepare ZnGeP 2 single crystal is melt directional solidification such as vertical Bridgman (VB) method [2], vertical gradient freezing (VGF) method [3] and horizontal gradient freezing (HGF) method [4]. However, it is still not easy to prepare high quality ZnGeP 2 single crystals due to the existence of micro-crack induced by anisotropic thermal expansion and point defects such as vacancies of volatile components that lead to the deviation in stoichiometry [5].…”

Growth and characterization of ZnGeP2 single crystals by the modified Bridgman method

“…In recent years, considerable effort was focused on the growth of high-quality single crystals of this material. In order to overcome some problems in ZGP crystals growth, the single crystals are grown by various methods such as the vertical Bridgman (VB) [9], vertical gradient freezing (VGF) [10], horizontal gradient freezing (HGF) [11], liquid encapsulated Czochralski (LEC) [12], highpressure vapor transport (HPVT) [13] methods, etc. For the present, the most conventional techniques for the growth of ZGP single crystals remain the VB and HGF methods [14][15][16].…”