1994
DOI: 10.1016/0927-0248(94)90159-7
|View full text |Cite
|
Sign up to set email alerts
|

Zn3P2 photovoltaic film growth for Zn3P2/ZnSe solar cell

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1

Citation Types

0
10
0

Year Published

1998
1998
2023
2023

Publication Types

Select...
5
3
1

Relationship

0
9

Authors

Journals

citations
Cited by 15 publications
(10 citation statements)
references
References 12 publications
0
10
0
Order By: Relevance
“…Despite its germane optoelectronic properties, to date, a Zn 3 P 2 device of sufficient efficiency for commercial applications has not been demonstrated. [11][12][13][14][15][16] Besides problems such as poor band-alignment with buffer layers and inadequate interface passivation, 17,18 low surface stability and oxidation in the presence of oxygen [18][19][20] and moisture 21 remain major problems that severely limit the fabrication of efficient Zn 3 P 2 -based photovoltaics. Zn 3 P 2 typically reacts with moisture to form zinc hydroxide and with oxygen to form zinc phosphate.…”
Section: Introductionmentioning
confidence: 99%
“…Despite its germane optoelectronic properties, to date, a Zn 3 P 2 device of sufficient efficiency for commercial applications has not been demonstrated. [11][12][13][14][15][16] Besides problems such as poor band-alignment with buffer layers and inadequate interface passivation, 17,18 low surface stability and oxidation in the presence of oxygen [18][19][20] and moisture 21 remain major problems that severely limit the fabrication of efficient Zn 3 P 2 -based photovoltaics. Zn 3 P 2 typically reacts with moisture to form zinc hydroxide and with oxygen to form zinc phosphate.…”
Section: Introductionmentioning
confidence: 99%
“…Also zinc based hetero-junction partners are being preferred over toxic cadmium based compounds such as Cadmium sulfide [1]. Zn 3 P 2 has applications in lithium ion batteries [2] besides being an important semiconductor from the II-V group used for optoelectronic applications [3][4][5][6]. Zinc phosphide exhibits favorable optoelectronic properties such as direct bandgap of 1.5 eV which corresponds to the optimum solar energy conversion range [7][8][9][10].…”
Section: Introductionmentioning
confidence: 99%
“…Kakishita et al report a low-pressure MOCVD system with dimethylzinc (DMZ) and diluted phosphine (PH 3 ) as reactant gas [72]. Phosphine was cracked at 800°C and Zn 3 P 2 films were grown on ZnSe single crystal substrates at a growth temperature of 290-410°C.…”
Section: Metal Organic Chemical Vapor Deposition (Mocvd)mentioning
confidence: 99%
“…Zinc phosphide (Zn 3 P 2 ) is an important optoelectronic material, which also has applications in lithium ion batteries [71]. It is an important semiconductor from the II-V group, and is used for optoelectronic applications [13,[72][73][74]. Zinc phosphide exhibits favorable optoelectronic properties, such as direct bandgap of 1.5 eV, which corresponds to the optimum solar energy conversion range [74][75][76][77].…”
Section: Introductionmentioning
confidence: 99%