Zn3P2 epitaxial growth by MOCVD

Kakishita, Kazuhiko; Ikeda, Shusaku; Suda, Toshikazu

doi:10.1016/0022-0248(91)90847-x

Cited by 12 publications

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References 16 publications

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“…The resistivity of Zn 3 P 2 NW was calculated about 5.6 × 10 2 Ω cm with the length and the diameter as 35 μm and 232 nm, respectively, based on the SEM characterization. The dark resistance here is higher than that of its thin film counterpart (2−3 × 10 2 ) possibly due to the contact resistance. On the other hand, under the illumination of light at a wavelength of 532 nm (green color with power <5 mW), 680 nm (red color with power <5 mW), or continuous wavelength from a white LED lamp, the resistance decreased significantly due to excess electron−hole pairs (EHPs) excited by the illuminating light, which has an energy larger than the band gap of Zn 3 P 2 .…”

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confidence: 67%

Single-Crystalline Branched Zinc Phosphide Nanostructures: Synthesis, Properties, and Optoelectronic Devices

et al. 2006

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Hierarchical tree-shaped nanostructures, nanobelts, and nanowires of Zn 3 P 2 were synthesized in a thermal assisted laser ablation process. All nanostructures are tetragonal phased Zn 3 P 2 with excellent crystallinity and are free from an oxidization layer according to electron microscopy and X-ray diffraction analyses. Optical measurement revealed a strong absorption from the ultraviolet to near-infrared regions. Optoelectronic devices fabricated using individual nanowires demonstrate a high sensitivity and rapid response to impinging light. A crossed heterojunction of an n-type ZnO nanowire and a p-type Zn 3 P 2 nanowire has been characterized, and it offers a great potential for a high efficient spatial resolved photon detector.Being a novel optoelectronic material, Zn 3 P 2 has the following advantages over some other materials. It has a direct band gap in the range of 1.4-1.6 eV, which is the optimum range for solar energy conversion. The large optical absorption coefficient (>10 4 cm -1 ) and a long minority diffusion length (∼13 µm) of Zn 3 P 2 permit high current collection efficiency. 1 In addition, the constituent materials are abundant and cheap and would allow the large scale deployment of such devices as solar cells, infrared (IR) and ultraviolet (UV) sensors, lasers, and light polarization step indicators. 2,3 In order to investigate the potential applications of Zn 3 P 2 , several kinds of heterojunctions have been designed, such as InP/Zn 3 P 2 , 4 Mg/Zn 3 P 2 , 5 Zn 3 P 2 /ZnSe, 2,6 ITO/ Zn 3 P 2 , 7 and ZnO/Zn 3 P 2 . 8 However, the majority of research on Zn 3 P 2 has been limited to thin films, and very little work has been done in the nanoscale range except for very few reports on the synthesis of Zn 3 P 2 nanoparticles 9-11 and on the synthesis of nanotrumpets with an unavoidable ZnO layer coated on the surface. 12 Because of the large excitonic radii, Zn 3 P 2 is expected to exhibit pronounced quantum size effect, which has been observed for Zn 3 P 2 nanoparticles. 10 To the best of our knowledge, the electric property and photoresponse of Zn 3 P 2 nanostructures, and heterojunctions made from Zn 3 P 2 nanostructures, have not been reported thus far.In this paper we report for the first time the synthesis of single crystalline tree-shape Zn 3 P 2 structure arrays, nanowires, and nanobelts. The morphology and crystal structure were determined by electron microscopy and analytical techniques. In addition, the optical property of the synthesized nanostructures has been measured through photoluminescence (PL). Furthermore, we also present the crossed heterojunction made using a ZnO nanowire and a Zn 3 P 2 nanowire. Optoelectronic measurements of single Zn 3 P 2 nanowire and the crossed heterojunction indicate that Zn 3 P 2 was very sensitive to light and the heterojunction exhibits enhanced performance, which implies that the Zn 3 P 2 nanostructures have promising applications in optoelectronics.

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Single-Crystalline Branched Zinc Phosphide Nanostructures: Synthesis, Properties, and Optoelectronic Devices

et al. 2006

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“…In the case of phosphides, the possible formation of the highly-toxic phosphine gas, either during synthesis or during operation, is also a concern. 58,59 Another challenge with pnictides will be the ability to form p-n homojunctions, instead of relying on other materials to form heterojunction-based devices. 46 While DFT often does not provide quantitative accuracy for defect formation energies, previous studies have shown that SCAN can provide an upper bound (compared to other semilocal functionals) on defect formation energies, with qualitative trends being similar across different functionals for a given compound.…”

Section: Discussionmentioning

confidence: 99%

Section: Discussionmentioning

confidence: 99%

Study of pnictides for photovoltaic applications

Kumar

Gautam

2023

Phys. Chem. Chem. Phys.

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“…In addition to intrinsic defects, there is strong experimental evidence that hydrogen impurities are likely present in Zn 3 P 2 samples: growth of Zn 3 P 2 thin films is conventionally carried out in H 2 atmosphere and/or PH 3 gas using techniques such as physical vapor transport, 4,29 chemical vapor deposition 30,31 and metal–organic chemical vapor deposition, 32–35 ionized cluster beam deposition, 36 and RF sputtering. 37,38 Sometimes the samples were also annealed in H 2 gas following growth.…”

Section: Introductionmentioning

confidence: 99%

First-principles study of intrinsic and hydrogen point defects in the earth-abundant photovoltaic absorber Zn₃P₂

Yuan,

Xiong,

Hautier

2023

J. Mater. Chem. A

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Zn3P2 epitaxial growth by MOCVD

Cited by 12 publications

References 16 publications

Single-Crystalline Branched Zinc Phosphide Nanostructures: Synthesis, Properties, and Optoelectronic Devices

Single-Crystalline Branched Zinc Phosphide Nanostructures: Synthesis, Properties, and Optoelectronic Devices

Study of pnictides for photovoltaic applications

First-principles study of intrinsic and hydrogen point defects in the earth-abundant photovoltaic absorber Zn₃P₂

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Zn3P2 epitaxial growth by MOCVD

Cited by 12 publications

References 16 publications

Single-Crystalline Branched Zinc Phosphide Nanostructures: Synthesis, Properties, and Optoelectronic Devices

Single-Crystalline Branched Zinc Phosphide Nanostructures: Synthesis, Properties, and Optoelectronic Devices

Study of pnictides for photovoltaic applications

First-principles study of intrinsic and hydrogen point defects in the earth-abundant photovoltaic absorber Zn3P2

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First-principles study of intrinsic and hydrogen point defects in the earth-abundant photovoltaic absorber Zn₃P₂