Zn precipitation and Li depletion in Zn implanted ZnO

Chan, Keng Siew; Vines, Lasse; Li, L; Jagadish, Chennupati; Svensson, B. G.; Wong‐Leung, Jennifer

doi:10.1063/1.4958693

Cited by 3 publications

(3 citation statements)

References 15 publications

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“…It should be noted that substantial defect annealing occurs within a short period of time as seen from the comparison of 5 s and 30 min anneal data at 800 °C in figure 1(a). Such behavior of ion-induced defects under RTP annealing is not surprising and previously was observed in ZnO implanted with Zn [28] and rare earth ions [29]. It was demonstrated also that transient processes of defect reconstruction and defect diffusion can occur supported by our results as shown below.…”

Section: Resultssupporting

confidence: 90%

Energetics, migration and trapping of Zn interstitials in ZnO

Azarov

Kuznetsov

2019

J. Phys. D: Appl. Phys.

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Zn interstitial (Zni) is one of the fundamental intrinsic defects in ZnO and prominently affects the physical properties of the material. Here, energetics and migration properties of Zni's have been studied in ion implanted ZnO using new approach based on the Li marker diffusion. Specifically, ZnO single crystals were implanted with 3.2 keV/amu B and BF2 ions and the release of Zni's from the implanted regions during annealing was correlated with the advance of the characteristic Li depleted region into the bulk of the samples. Using this methodology we calculate the activation energy of 1.45 eV to govern the process for B implants. Assuming that the migration energy of Zni to be of ~0.6 eV, as discussed previously in literature, a barrier for releasing Zni from the implanted region may be estimated as ~0.8-0.9 eV. Meanwhile, in the BF2 implanted samples, the migration of Zni's is less efficient, as interpreted from the Li redistribution features in these samples; in particular, it is argued that Zni's may be trapped by defect complexes related to the presence of F.

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Section: Resultssupporting

confidence: 90%

Energetics, migration and trapping of Zn interstitials in ZnO

Azarov

Kuznetsov

2019

J. Phys. D: Appl. Phys.

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“…The RBS data also substantiate the redistribution of Ge observed by SIMS, and that 600 • C is not sufficient to promote Ge and Zn self-diffusion with an associated crystal recovery. Interestingly, 800 • C is in the temperature range where Zn self-interstitials (Zn I ) are released from implantation induced defect clusters [27][28][29], and this may catalyse the Ge migration and formation of the Ge nanocrystals.…”

Section: Resultsmentioning

confidence: 99%

Formation and functionalization of Ge-nanoparticles in ZnO

Aarseth¹,

Granerød²,

Galeckas³

et al. 2021

Nanotechnology

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Semiconductor nanocrystals are often proposed as a viable route to improve solar energy conversion in photovoltaics and photoelectrochemical systems. Embedding the nanocrystals in, e.g., a transparent and conducting electrode of a solar cell will promote the photon absorption and subsequent transfer of the generated charge carriers from the nanocrystal, and thereby enhance the function of the electrode. This can be accomplished by embedding a semiconducting nanocrystal with a small bandgap in a transparent conducting oxide (TCO), which is commonly utilized as electrode in new generation solar cells. Here, we demonstrate the incorporation, formation, and functionalization of germanium (Ge) nanocrystals in zinc oxide utilizing ion implantation, where post implantation annealing at 800 • C results in diamond cubic Ge nanocrystals with sizes between 2 and 20 nm. Photoluminecence spectra show a distinct emission around 0.7 eV arising from the Ge nanocrystals, and with additional emission features up to 1.15 eV due to quantum confinement, demonstrating a novel functionalization and tunability of the TCO electrode.

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“…For example, it was demonstrated that Zn precipitation formation and Li depletion are well correlated in Zn implanted ZnO single crystals. 38 Specifically for Er, a formation/dissociation of optically active defect centers in the course of annealing can play a role. 21 Furthermore, a large strain can be accumulated in heavily damaged crystals and it was shown that this strain may act as a driving force for defect transformation with increasing ion fluence.…”

Section: Journal Of Applied Physicsmentioning

confidence: 99%

Defect annealing kinetics in ZnO implanted with Zn substituting elements: Zn interstitials and Li redistribution

Azarov

Aarseth

Vines

et al. 2019

Journal of Applied Physics

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It is known that the behavior of residual Li in ion implanted ZnO depends on the preferential localization of the implants, in particular, forming characteristic Li depleted or Li pileup regions for Zn or O sublattice occupation of the implants due to the corresponding excess generation of Zn and O interstitials in accordance with the so-called "+1 model." However, the present study reveals that conditions for the radiation damage annealing introduce additional complexity into the interpretation of the Li redistribution trends. Specifically, four implants residing predominantly in the Zn-sublattice, but exhibiting different lattice recovery routes, were considered. Analyzing Li redistribution trends in these samples, it is clearly shown that Li behavior depends on the defect annealing kinetics which is a strong function of the implanted fluence and ion species. Thus, Li depleted and Li pileup regions (or even combinations of the two) were observed and correlated with the defect evolution in the samples. It is discussed how the observed Li redistribution trends can be used for better understanding a thermal evolution of point defects in ZnO and, in particular, energetics and migration properties of Zn interstitials.

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Zn precipitation and Li depletion in Zn implanted ZnO

Cited by 3 publications

References 15 publications

Energetics, migration and trapping of Zn interstitials in ZnO

Energetics, migration and trapping of Zn interstitials in ZnO

Formation and functionalization of Ge-nanoparticles in ZnO

Defect annealing kinetics in ZnO implanted with Zn substituting elements: Zn interstitials and Li redistribution

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