Zn(O, S) Buffer Layers and Thickness Variations of CdS Buffer for Cu $_{2}$ZnSnS$_{4}$ Solar Cells

Ericson, Tove; Scragg, Jonathan J.; Hultqvist, Adam; Wätjen, Jörn Timo; Szaniawski, Piotr; Törndahl, Tobias; Platzer‐Björkman, Charlotte

doi:10.1109/jphotov.2013.2283058

Cited by 88 publications

(61 citation statements)

References 16 publications

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“…Although short-circuit current (J sc ) can be reduced by the CBO seen from CIGS toward CdS, the CBO has an effect of increasing the open-circuit voltage (V oc ) of the CIGS solar cell. For these reasons, a thin CdS layer is introduced in the solar cell and its thickness is precisely controlled to maximize the fill factor (FF) [12,13]. However, extracting the exact E g values of the solarcell materials using the conventional optical methods is quite challenging since they usually require preparation of samples with extremely thin films which is not easily achievable in a CIGS solar cell having bulky grains, which calls for different approaches.…”

Section: Introductionmentioning

confidence: 99%

A Study on the Band Structure of ZnO/CdS Heterojunction for CIGS Solar-Cell Application

Sim¹,

Lee²,

Cho³

et al. 2015

JSTS:Journal of Semiconductor Technology and Science

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Abstract-In this paper, ZnO films were prepared by atomic layer deposition (ALD) and CdS films were deposited using chemical bath deposition (CBD) to form ZnO/CdS heterojunction. More accurate mapping of band arrangement of the ZnO/CdS heterojunction has been performed by analyzing its electrical and optical characteristics in depth by various methods including transmittance, x-ray photoemission spectroscopy (XPS), and ultraviolet photoemission spectroscopy (UPS). The optical bandgap energies (E g ) of ZnO and CdS were 3.27 eV and 2.34 eV, respectively. UPS was capable of extracting the ionization potential energies (IPEs) of the materials, which turned out to be 8.69 eV and 7.30 eV, respectively. The electron affinity (EA) values of ZnO and CdS calculated from IPE and E g were 5.42 eV and 4.96 eV, respectively. Energy-band structures of the heterojunction could be accurately drawn from these parameters taking the conduction band offset (CBO) into account, which will substantially help acquisition of the full band structures of the thin films in the CIGS solar-cell device and contribute to the optimal device designs.

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Section: Introductionmentioning

confidence: 99%

A Study on the Band Structure of ZnO/CdS Heterojunction for CIGS Solar-Cell Application

Sim¹,

Lee²,

Cho³

et al. 2015

JSTS:Journal of Semiconductor Technology and Science

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“…In this work we use 1D SCAPS [1] models to simulate the influence of CZTS absorber layer thickness on current-voltage (J-V) characteristics and compare with an empirical data set with similar thickness variations [2]. The models are minor variations to our baseline reference device model [3], built with input parameters from a reference device presented at IEEE PVSC-41 [4]. The aim of this study is to evaluate the trends induced by changing thickness, and to predict the influence of thicknesses variation, for future reference, in the limit of bulk and back contact recombination.…”

Section: Introductionmentioning

confidence: 99%

“…For a description of the deposition process and full device structure, see [4]. The composition of the absorber layers in the thickness series varies in Cu/Sn ratio within 1.83 -1.93, and in Zn/(Cu+Sn) ratio within 0.36 -0.41, as measured from X-ray fluorescence spectroscopy (XRF).…”

Section: Introductionmentioning

confidence: 99%

CZTS solar cell device simulations with varying absorber thickness

Frisk

Ren

et al. 2015

2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)

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CZTS solar cell device simulation with varying absorber thickness. Abstract -In this study the influence of absorber layer thickness on the trends of the four current-voltage (J-V) parameters for our CZTS solar cells is studied with simulations and compared with empirical data. In the case of dominating interface recombination we find that open-circuit voltage and fillfactor are largely unaffected by thickness variations 0.5 -2.0 μm, whereas short-circuit current, and thereby efficiency, saturates (98 % of max) at >1.1 μm absorber thickness, in agreement with measurements. In the case of suppressed interface recombination all four J-V parameters exhibit strong thickness dependence at <0.5 μm due to back contact recombination.

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“…For pure sulphide CZTS Ericson et al [12] showed that the sulphur ratios in ALD deposited Zn(O,S) buffer layer have large influences on solar cell device performance resulting in devices with 4.6% efficiency for an optimized composition compared to 7.3% for reference CZTS/CdS device. Nguyen et al [13] showed that thin 10-25nm ZnS buffer layer grown by and strongly depend on the absorber surface composition.…”

Section: Introductionmentioning

confidence: 99%

Towards high performance Cd-free CZTSe solar cells with a ZnS(O,OH) buffer layer: the influence of thiourea concentration on chemical bath deposition

Neuschitzer

Lienau

Guc

et al. 2016

J. Phys. D: Appl. Phys.

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Zn(O, S) Buffer Layers and Thickness Variations of CdS Buffer for Cu $_{2}$ZnSnS$_{4}$ Solar Cells

Cited by 88 publications

References 16 publications

A Study on the Band Structure of ZnO/CdS Heterojunction for CIGS Solar-Cell Application

A Study on the Band Structure of ZnO/CdS Heterojunction for CIGS Solar-Cell Application

CZTS solar cell device simulations with varying absorber thickness

Towards high performance Cd-free CZTSe solar cells with a ZnS(O,OH) buffer layer: the influence of thiourea concentration on chemical bath deposition

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