Zn incorporation in Ga1−<i>x</i>Al<i>x</i>As grown by liquid phase epitaxy and its electrical properties

Vassilieff, G.; Saint-Cricq, B.

doi:10.1063/1.332660

Cited by 6 publications

(1 citation statement)

References 6 publications

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“…In the literature, a considerable number of studies on zinc doping of GaAs have been pub-li shed [1][2][3][4]12,[17][18][19][20][21][22][23][24], in contra st to the relatively small amount of work on the p-type doping of AlGaAs with zinc [25]. When the ho le concentration is plotted versus the input mole fraction DEZn on a log-log plot, in most cases a linear relation has been reported [1,2, with si opes varying between 004 and lA, although also nonlinear relations have been obtained [2,21,22].…”

Section: Introductionmentioning

confidence: 99%

Pressure and temperature dependence of Zn incorporation in metalorganic chemical vapour deposition grown GaAs and AlGaAs using diethylzinc as precursor

Hageman

Croon

Tang

et al. 1993

Journal of Crystal Growth

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Zinc doping of MOCVD grown GaAs and AlGaAs using diethylzinc (DEZn) as precursor has been studied as a function of the zinc input mole fraction, growth temperature, aluminum fraction of the AIGaAs alloy and total reactor pressure. The experiments have been performed in two different reactors which differ in pressure and tempe rature distributions. We have found that the zinc incorporation follows a Iinear behaviour in a log-log plot of hole concentration versus zinc input mole fraction with a slope of 1 and that the incorporation of zinc is independent of the fraction Al in AlxGaJ_xAs up to x = 0.45. The zinc incorporation decreased with increasing growth tempe rature following an Arrhenius type of behaviour for both GaAs and AlGaAs. This tempe rature behaviour did not change when the reactor pressure was lowered. Ali experimental results can be explained satisfactorily by a model which takes into account that the incorporation of zinc is preluded by an adsorption-desorption equilibrium of zinc at the step of the growing crystal.

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Section: Introductionmentioning

confidence: 99%

Pressure and temperature dependence of Zn incorporation in metalorganic chemical vapour deposition grown GaAs and AlGaAs using diethylzinc as precursor

Hageman

Croon

Tang

et al. 1993

Journal of Crystal Growth

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Misorientation dependence of zinc incorporation in GaAs

Anders

Hageman

Giling

1994

Journal of Crystal Growth

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Doping studies of zinc have been carried out for metalorganic chemical vapour deposition (MOCVD) grown GaAs, with diethyl zinc as precursor. The zinc incorporation has been studied as a function of the zinc input mole fraction, growth temperature and substrate misorientation. It is found that the zinc incorporation on (001) substrates misoriented towards [011] and [011] directions showed a consistent and similar dependence on the misorientation angle at various zinc input mole fractions, with an observed minimum in the Zn-incorporation at 40 off. The observed temperature dependence leads to a apparent activation energy of -59 kcal/mol for zinc incorporation which is attributed to the enthalpy involved in the formation of two bonds during the incorporation. The dependence on the misorientation angle is explained by competition between the influence of "step trapping" at lower misorientation (and higher step velocities) and the increase of available kinksitcs at higher misorientation angles. _______ and trimethyl gallium (TMG) as growth precur-0 Corresponding author SOFS, and hydrogen, purified by a Pd-diffusion 0022-0248/94/$07.OO

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Preparation of devices by liquid phase epitaxy with application to the achievement of a visible laser in GaAlAs

Vassilieff

Saint-Cricq

1984

Journal of Applied Physics

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The effect of introducing Sn and Ge doping on the liquidus-solidus curves is studied for the case of epitaxy in GaAlAs. The proposed theory combined with the equations for epitaxial layer deposit kinetics has enabled the SPELLAS (simulation of liquid epitaxy processes for producing lasers) program to be set up. This program helps and completely simulates the production of multilayers by liquid-phase epitaxy according to several technologically important choices. In particular, we shall show the advantage of using a precursor substrate for a first deposition. An example of its application will be described for the preparation of visible lasers in GaAlAs. A laser structure emitting at 706 nm with a threshold current density of 4.3 kA/cm2 and an efficiency of ηD=20% has thus been made.

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Zn incorporation in Ga1−xAlxAs grown by liquid phase epitaxy and its electrical properties

Abstract: Phase equilibria in the system Al-Ga-As-Sn and electrical properties of Sndoped liquid phase epitaxial Al x Ga1−x As

Cited by 6 publications

References 6 publications

Pressure and temperature dependence of Zn incorporation in metalorganic chemical vapour deposition grown GaAs and AlGaAs using diethylzinc as precursor

Pressure and temperature dependence of Zn incorporation in metalorganic chemical vapour deposition grown GaAs and AlGaAs using diethylzinc as precursor

Misorientation dependence of zinc incorporation in GaAs

Preparation of devices by liquid phase epitaxy with application to the achievement of a visible laser in GaAlAs

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