Zn diffusion in Ruthenium doped InP with annealing by Metalorganic Vapor Phase Epitaxy

Yamaguchi, H.; Nagira, Takashi; Kawazu, Z.; Ono, K.; Tsuji, Masayoshi

doi:10.1109/iciprm.2013.6562581

Cited by 1 publication

(2 citation statements)

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“…2. The SIMS profiles of Zn contained two diffusion fronts of Zn in Ru-InP [4]. To discuss the degree of Zn diffusion from the lower layer of Zn-InP to Ru-InP, we defined each diffusion front as deep or shallow.…”

Section: Methodsmentioning

confidence: 99%

“…However, diffusion of Zn from Zn-InP into Ru-InP at the current blocking layer caused the volume resistivity to decrease. This unintentional effect was predominantly generated by diffusion of Zn during thermal procedures such as re-growth of the blocking layer [4]. To investigate the dependence of Zn diffusion on Zn concentration, we fabricated experimental samples resembling a laser diode blocking layer with three concentrations of Zn, and annealed the samples by metal-organic vapor phase epitaxy (MOVPE).…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Dependence of the diffusion of zinc from zinc-into ruthenium-doped indium phosphide on zinc concentration

Yamaguchi

Nagira

Kawazu

et al. 2014

26th International Conference on Indium Phosphide and Related Materials (IPRM)

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Short-Abstract-We investigated the Zn concentration dependence of Zn diffusion from Zn-doped InP (Zn-InP) to Rudoped InP (Ru-InP). As semi-insulated InP, Ru-InP shows advantages in terms of higher resistivity and lower capacitance when Ru-InP is sandwiched by Zn-InP. Control of the diffusion of Zn from the adjacent Zn-InP layer is required to achieve laser diodes with superior characteristics. In this paper, we examined the diffusion of Zn at a Ru-InP stacking structure sandwiched by Zn-InP using metal-organic vapor phase epitaxy.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%