Zn diffusion behavior at the InGaAsP/InP heterointerface grown using MOCVD

Kadoiwa, K.; Ono, K.; Ohkura, Y.

doi:10.1016/j.jcrysgro.2006.09.028

Cited by 10 publications

(7 citation statements)

References 7 publications

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“…The performance of any semiconductor devices significantly depends on the surface morphology, impurity in surface and interface, and abruptness of the interface . Secondary ion mass spectroscopy (SIMS) gives excellent information about of alloy composition, atomic homogeneity and interface characteristics of grown layers with its depth profile measurements capability in ppm range …”

Section: Introductionmentioning

confidence: 99%

Surface structure and photoluminescence properties of AZO thin films on polymer substrates

Akin

Özen

Efkere

et al. 2014

Surf. Interface Anal.

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Al-doped zinc oxide (AZO) thin films were deposited on indium tin oxide (ITO) coated polyethylene terephthalate (PET) substrates by radio frequency (RF) magnetron sputtering method at room temperature. The effects of film thickness on the surface structure and the photoluminescence properties of the films were investigated by atomic force microscopy (AFM), secondary ion mass spectroscopy (SIMS) and room temperature photoluminescence (PL). AFM analysis showed that the surface of all films was extremely flat and uniform at nanoscale. Root mean square (RMS) value of the surface roughness which scanned the surface area of 3 μm by 3 μm and grain size increased with increasing the film thickness. Thus, the surface morphology of the films became rough because of the coarse grains. The depth profile of AZO layers was analyzed by SIMS. It was found that the thickness of the AZO layer is almost same with the desired film thickness. The PL intensity of the dominant peak decreased and shifted slightly towards the shorter wavelengths with increasing the film thickness. According to the relationships between luminescence intensity and crystalline characteristics, it was observed that the intensity of the peak decreased by the increased surface area of the grains.

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Section: Introductionmentioning

confidence: 99%

Surface structure and photoluminescence properties of AZO thin films on polymer substrates

Akin

Özen

Efkere

et al. 2014

Surf. Interface Anal.

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“…An interstitial Zn atom diffuses quickly until it is trapped by a group III vacancy and thus incorporated as a substitutional Zn atom, which is much less mobile. The high diffusivity of Zn interstitials was confirmed by the observation of double diffusion front in InP [4], and they were considered to be the major diffusion source [5]. If the creation of Zn interstitials can be minimized, an abrupt doping profile with minimized Zn diffusion is expected.…”

Section: Introductionmentioning

confidence: 94%

Control of Zn diffusion in InP/InAlGaAs-based heterojunction bipolar transistors and light emitting transistors

Huang¹,

Ryou²,

Dupuis³

2008

Journal of Crystal Growth

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“…Layers with a higher phosphide content are more strongly affected by this process. 39 Therefore, if the growth direction is reversed and the GaInP junction is grown last, the detrimental effect of the temperature-induced diffusion processes is less severe.…”

Section: Comparison Between Upright and Inverted Grown Solar Cellsmentioning

confidence: 99%

Two‐terminal III–V//Si triple‐junction solar cell with power conversion efficiency of 35.9 % at AM1.5g

Schygulla

Müller

David

et al. 2021

Progress in Photovoltaics

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III–V//Si multijunction solar cells offer a pathway to increase the power conversion efficiency beyond the fundamental Auger limit of silicon single‐junctions. In this work, we demonstrate how the efficiency of a two‐terminal wafer‐bonded III–V//Si triple‐junction solar cell is increased from 34.1 % to 35.9 % under an AM1.5g spectrum, by optimising the III–V top structure. This is the highest reported efficiency to date for silicon‐based multijunction solar cell technologies. This improvement was accomplished by two main factors. First, the integration of a GaInAsP absorber in the middle cell increased the open‐circuit voltage by 51 mV. Second, a better current matching of all subcells enhanced the short‐circuit current by 0.7 mA/cm2. Two different growth directions, upright and inverted, were investigated. The highest cell efficiency of 35.9 % (Voc = 3.248 V, jsc = 13.1 mA/cm2, FF = 84.3 %) was achieved with an upright grown structure. Processing of upright structures requires additional bonding steps, which results in a reduced homogeneity of cell performance across the wafer. A detailed comparison with the currently best triple‐junction solar cell reveals future improvement opportunities and limits, considering voltage and current, respectively.

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Zn diffusion behavior at the InGaAsP/InP heterointerface grown using MOCVD

Cited by 10 publications

References 7 publications

Surface structure and photoluminescence properties of AZO thin films on polymer substrates

Surface structure and photoluminescence properties of AZO thin films on polymer substrates

Control of Zn diffusion in InP/InAlGaAs-based heterojunction bipolar transistors and light emitting transistors

Two‐terminal III–V//Si triple‐junction solar cell with power conversion efficiency of 35.9 % at AM1.5g

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