Zirconia and hafnia films from single source molecular precursor compounds: Synthesis, characterization and insulating properties of potential high k-dielectrics

Schneider, Jörg J.; Hoffmann, Rudolf C.; Issanin, Alexander; Dilfer, Stefan

doi:10.1016/j.mseb.2011.05.024

Cited by 21 publications

(19 citation statements)

References 35 publications

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“…Details of the precursor syntheses were already published 14, 15. A short summary of the synthesis is given in the following.…”

Section: Methodsmentioning

confidence: 99%

“…Tris[2‐(methoxyimino)‐propanoato]indium was prepared from indium chloride and the ammonium salt of (1) 14. Tin‐hydroxo‐[2‐(methoxyimino)propanoate] was prepared by reaction of tin butoxide and (1) 15. Hafnium‐oxo‐hydroxo‐[2‐(methoxyimino)propanoate] was prepared by reaction of hafnium butoxide and (1) 15.…”

Section: Methodsmentioning

confidence: 99%

“…Tin‐hydroxo‐[2‐(methoxyimino)propanoate] was prepared by reaction of tin butoxide and (1) 15. Hafnium‐oxo‐hydroxo‐[2‐(methoxyimino)propanoate] was prepared by reaction of hafnium butoxide and (1) 15.…”

Section: Methodsmentioning

confidence: 99%

“…Hafnia layers were deposited from a solution of hafnium oximato complex 15 (2.5 wt% in methoxyethanol/dimethoxyethane, volume ratio 9:1) by spincoating (6 s/1000 rpm followed by 20 s/2000 rpm) and annealing at 200 °C for 5 min in a drying cabinet.…”

Section: Methodsmentioning

confidence: 99%

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Transparent indium tin oxide as inkjet‐printed thin film electrodes for organic field‐effect transistors

Hoffmann

Dilfer

Schneider

2011

Physica Status Solidi (a)

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Indium tin oxide (ITO) thin films can be manufactured by spincoating or inkjet printing of a solution containing indium and tin oximato precursor complexes. After sintering at 600 °C and annealing in reducing atmosphere, resistivities as low as 2.34 × 10−3 Ω cm were observed, with a transparency of more than 95% in the visible region. The employment of an amorphous hafnia interlayer on top of a silicon dioxide dielectric was found to improve the wetting behaviour significantly. Thus source–drain structures could be obtained by inkjet‐printing and field‐effect transistors were constructed using poly(3‐hexylthiophene) (P3HT) as organic semiconductor.

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“…Details of the precursor syntheses were already published 14, 15. A short summary of the synthesis is given in the following.…”

Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

See 2 more Smart Citations

Transparent indium tin oxide as inkjet‐printed thin film electrodes for organic field‐effect transistors

Hoffmann

Dilfer

Schneider

2011

Physica Status Solidi (a)

Self Cite

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“…By far, many gate oxides, such as Ta 2 O 5 , HfO 2 , Al 2 O 3 , TiO 2 , Y 2 O 3 , and ZrO 2 have been investigated and applied in MOS devices [3e9]. Among these candidates, Zirconium oxide (ZrO 2 ) is one of the most promising candidates to replace SiO 2 due to its excellent electrical properties and high thermal stability in contact with Si [10,11]. It has been reported that ZrO 2 has excellent properties such as relatively high dielectric constant (～ 25), wide energy band gap (5e7) and satisfactory ZrO 2 /Si interface chemistry [12,13].…”

Section: Introductionmentioning

confidence: 99%

Effects of boron incorporation on the structural, optical and electrical properties of sol–gel-derived ZrO2 gate dielectrics

Xiao

Jin

et al. 2015

Journal of Alloys and Compounds

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High‐Mobility ZnO Thin Film Transistors Based on Solution‐processed Hafnium Oxide Gate Dielectrics

Esro

Vourlias

Somerton

et al. 2014

Adv Funct Materials

159

115

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The properties of metal oxides with high dielectric constant (k) are being extensively studied for use as gate dielectric alternatives to silicon dioxide (SiO2). Despite their attractive properties, these high‐k dielectrics are usually manufactured using costly vacuum‐based techniques. In that respect, recent research has been focused on the development of alternative deposition methods based on solution‐processable metal oxides. Here, the application of the spray pyrolysis (SP) technique for processing high‐quality hafnium oxide (HfO2) gate dielectrics and their implementation in thin film transistors employing spray‐coated zinc oxide (ZnO) semiconducting channels are reported. The films are studied by means of admittance spectroscopy, atomic force microscopy, X‐ray diffraction, UV–Visible absorption spectroscopy, FTIR, spectroscopic ellipsometry, and field‐effect measurements. Analyses reveal polycrystalline HfO2 layers of monoclinic structure that exhibit wide band gap (≈5.7 eV), low roughness (≈0.8 nm), high dielectric constant (k ≈ 18.8), and high breakdown voltage (≈2.7 MV/cm). Thin film transistors based on HfO2/ZnO stacks exhibit excellent electron transport characteristics with low operating voltages (≈6 V), high on/off current modulation ratio (∼107) and electron mobility in excess of 40 cm2 V−1 s−1.

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Zirconia and hafnia films from single source molecular precursor compounds: Synthesis, characterization and insulating properties of potential high k-dielectrics

Cited by 21 publications

References 35 publications

Transparent indium tin oxide as inkjet‐printed thin film electrodes for organic field‐effect transistors

Transparent indium tin oxide as inkjet‐printed thin film electrodes for organic field‐effect transistors

Effects of boron incorporation on the structural, optical and electrical properties of sol–gel-derived ZrO2 gate dielectrics

High‐Mobility ZnO Thin Film Transistors Based on Solution‐processed Hafnium Oxide Gate Dielectrics

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